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VDSS(TJ = 25°C to 175°C): 150 V
VDGR( TJ = 25°C to 175°C; RGS = 1 MΩ): 150 V
VGSM: &plu*n;20 V
ID( TC = 25°C ): 96 A
ID(RMS) : 75 A
IDM(TC = 25°C, pulse width limited by TJM): 250 A
IAR(TC = 25°C): 60 A
EAR( TC = 25°C): 40 mJ
EAS( TC = 25°C ): 1.0 J
dv/dt(IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω): 10 V/ns
PD(TC = 25°C): 480 W
TJ: -55 ... 175 °C
TJM: 175 °C
Tstg : -55 ... 150 °C
TL( 1.6 mm (0.062 in.) from case for 10 s ): 300 °C
Md( Mounting torque TO-*): 1.13/10 Nm/lb.in.
Weight TO-* 5.5 g
TO-268 5.0 g
IXYS/艾赛斯
IXTQ96N15P
*缘栅(MOSFET)
N沟道
增强型
S/开关
N-FET硅N沟道
96A
2.5-5
0
6300
480W