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The RF MOSFET Line
RF POWER FIELD EFFE* TRANSISTOR
N–Channel Enhancement–Mode Lateral MOSFET
MRF374A
470 – 860 MHz, 130 W, 32 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
• T*ical Two–Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 130 Watts PEP
Power Gain — 17.3 dB
Efficiency — 41%
IMD — –32.5 dBc
• 100% Tested for Load Mi*atch Stress at All Phase Angles with 10:1
VSWR @ 32 Vdc, 860 MHz, 130 Watts, f1 = 857 MHz, f2 = 863 MHz
• Integrated *D Protection
• Excellent Thermal Stability
• Characterized with Differential Large–Signal Impedance Parameters
请联系我们(contact us)
深圳宝康电子经营部
:周先生
地址:广东省深圳市福田区华强北路华强电子世界3号楼2A417号
:
传真:
邮件:zhou.
MSN:zhou.
网址:WWW.BOKONIC.COM
邮编:518031
Bokon International Trade Co., Limited
ShenZhen Headquarters
Contact Person:Sean
Address:2A417,Huaqiang Electronic World,Huaqiang North road, Futian District, ShenZhen,China.
: 86-
Fax: 86-
Mobile phone: 9
E-mail:zhou.
MSN:zhou.
Http://www.bokonic.com
Zip Code:518031
其他
MOTOROLA/摩托罗拉
MRF374A
N-FET硅N沟道
SP/*外形
A/宽频带放大
N沟道
*缘栅(MOSFET)
增强型