供应SSD-601 UV紫外线传感器

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SSD-601 紫外线传感器 (插件式) .     简介SSD-601 紫外线传感器是一种P-N异质节光电二*管,是基于氮化镓宽禁带半导体材料制备而成的。氮化镓禁带宽度约为3.4电子伏,它不吸收可见光。该类传感器具有很强的可见光*干扰特性,在检测紫外线时不需附加滤光片来抑制可见光。其检测紫外线的主要响应区域覆盖了长波紫外线 (UVA, 波段范围420 nm-320 nm) 和中波紫外线 (UVB, 波段范围 320 nm-275 nm ) 的波段范围。 
2.     用途:
a.       测试太阳光中的紫外线强度 (礼品、化妆品用具);
b.       紫外线灯管的紫外线发生强度测试 (*器械或民用 *碗柜的*效率检验); 
3.     特点:
a.       对紫外线检测灵敏度高;
b.       感应重复性高;
c.       *可见光干扰强;
d.       体积微小;
e.       寿命长;
4.     适用人士:长期从事户外工作的*工程师、爱好旅游的人士、注重皮肤*的女性以及需要携同出行的婴幼儿; 
5.     传感器参数

参数

*号

条件

*小值

中心值

*大值

单位

光谱带宽变化范围

lb

290

400

nm

峰值灵敏度波长

lp

330

nm

暗光输出电压

Vdark

光强= 100 mW/m2

lp= 330 nm

0

2

mV

灵敏度

Vs

   RL=1MΩ

3.9

4.0

4.1

mV/UVI

反向击穿电压

VBR

30

40

100

V

正向电压

VF

If=10mA

2.6

3.0

3.5

V

总电容

Ct

f=1MHz

6

pF

上升时间

tr

RL=1MΩ
CL=1000pF

10

mS

下降时间

tf

500

mS


SSD-602 紫外线传感器
SSD-602 紫外线传感器 (贴片式) 
1.     简介
SSD-602 紫外线传感器是一种P-N异质节光电二*管,是基于氮化镓宽禁带半导体材料制备而成的。氮化镓的禁带宽度约为3.4电子伏,它不吸收可见光。该类传感器具有很强的可见光*干扰特性,在检测紫外线时不需附加滤光片来抑制可见光。其检测紫外线的主要响应区域覆盖了长波紫外线 (UVA, 波段范围420 nm-320 nm) 和中波紫外线 (UVB, 波段范围 320 nm-275 nm ) 的波段范围。 
2.     用途:
a.       测试太阳光中的紫外线强度 (礼品、化妆品用具);
b.       紫外线灯管的紫外线发生强度测试 (*器械或民用 *碗柜的*效率检验); 
3.     特点:
a.       对紫外线检测灵敏度高;
b.       感应重复性高;
c.       *可见光干扰强;
d.       体积微小;
e.       寿命长;
4.     适用人士:长期从事户外工作的*工程师、爱好旅游的人士、注重皮肤*的女性以及需要携同出行的婴幼儿; 
5.     传感器参数 

参数

*号

条件

*小值

中心值

*大值

单位

光谱带宽变化范围

lb

290

400

nm

峰值灵敏度波长

lp

330

nm

暗光输出电压

Vdark

光强= 100 mW/m2

lp= 330 nm

0

2

mV

灵敏度

Vs

   RL=1MΩ

3.9

4.0

4.1

mV/UVI

反向击穿电压

VBR

30

40

100

V

正向电压

VF

If=10mA

2.6

3.0

3.5

V

总电容

Ct

f=1MHz

6

pF

上升时间

tr

RL=1MΩ
CL=1000pF

10

mS

下降时间

tf

500

mS


 
 

UV Photodiodes GaN

UV-photodiodes based on GaN are intrinsic visible blind due to high bandgap material, extreme irradiation hardness

Spectral range Chip size Package Note  
  GUVA-S10GD 200 - 370 nm 0.16 mm² SMD 3528 Si window  
  GUVB-S11GD 200 - 320 nm 0.16 mm² SMD 3528 Si window  
  GUVA-T11GD 200 - 370 nm 0.16 mm² TO-46 quartz window  
  GUVB-T11GD 200 - 320 nm 0.16 mm² TO-46 quartz window  
  GUVA-S12GD 240 - 370 nm 0.16 mm² SMD 3528 silicon window  
  GUVA-S22ED 290 - 370 nm 0.16 mm² SMD 1608 silicon/epoxy window  
  GUVC-T10GD 200 - 290 nm 0.16 mm² TO-46 quartz window  

UV Sensor Modules GaN

UV Sensor Modules based on GaN

Spectral range Size Note Data sheet
  GUVA-S22EM-3 290 - 370 nm 8 x 8 x 2 mm³ *all size request
  GUVA-T11GM-LA 220 - 370 nm 28 x 17 x 9 mm² basic request
  GUVA-T11GM-2 220 - 370 nm 36 x 22 x 7 mm² adjustable gain request
 

UV Photodiodes AlGaN

UV photodiodes based on AlGaN

  Spectral range Chip size Package Note  
  GaN-UVA-SMD 220 - 370 nm 0.076 mm² SMD 3228 peak at 350 nm  
  AlGaN-UVB 225 - 317 nm 0.076 mm² TO-18 peak at 300 nm  

UV Photodiodes SIC

UV-photodiodes based on SiC (Silicon Carbide) are intrinsic visible blind due to high bandgap material, extreme irradiation hardness, versions with integrated UVA, UCB or UVC filters on request

  Spectral range Active Area Package Note  
  SIC01S 210 - 380 nm 0.054 mm² TO-18 peak at 285 nm  
  SIC01S-C 230 - 285 nm 0.054 mm² TO-39 peak at 270 nm  
  SIC01S-HAT 210 - 380 nm 0.054 mm² TO-18 peak at 285 nm  
  SIC01S-ISO 210 - 380 nm 0.054 mm² TO-18 pins are isolated  
  SIC01M 220 - 360 nm 0.22 mm² TO-18 peak at 280 nm  
  SIC01M-C 230 - 285 nm 0.22 mm² TO-39 peak at 270 nm  
  SIC01M-LENS 220 - 360 nm 0.22 mm² TO-39 flame detection  
  SIC01L-5 220 - 360 nm 0,96 mm² TO-5 peak at 280 nm  
  SIC01L-18 220 - 360 nm 0,96 mm² TO-18 peak at 280 nm  
  SIC01L-5-C 230 - 285 nm 0,96 mm² TO-39 peak at 270 nm  
  SIC02S 210 - 380 nm 0.054 mm² stainless steel V2A peak at 285 nm  
  ERYF-STAR     TO-18 erythema sensor, for accurate sun-UV dosimetry  

UV Photodiodes SIC - large area arrays

UV photodiode array based on 4 parallel SiC detector chips for ultra low level UV radiation sensitivity, active area: 3.84 mm², peak response at 280 nm

  Spectral range Chip size Package Note  
  SIC01L4-5 210 - 380 nm 3.84 mm² TO-5 peak at 285 nm, Id 20 fA, 800 pF  
  SIC01L4-5-C 230 - 285 nm 3.84 mm² TO-5 peak at 270 nm, Id 20 fA, 800 pF  

UV Photodiodes SIC with TIA

UV photodiode based on SiC with integrated transimpedance amplifier for ultra low level UV radiation detection, peak response at 280 nm

  Spectral range Package Note  
  UV-TIAMO-BL 210 - 380 nm TO-5 sensitivity 0.5V/nW, gl* lens  

UV Photodiodes GaP

UV photodiodes based on GaP

  Spectral range Active Area Package Note  
  EPD-150-0/2.5 130 - 550 nm 4.8 mm² TO-39 sapphire window  
  EPD-150-0/3.6 130 - 550 nm 10.9 mm² TO-39 sapphire window  
  EPD-440-0/0.9 190 - 550 nm 0.51 mm² TO-46    
  EPD-440-0/1.4 190 - 550 nm 1.2 mm² TO-46    
  EPD-440-0/2.5 190 - 550 nm 4.8 mm² TO-39    
  EPD-440-0/3.6 190 - 550 nm 10.9 mm² TO-39    
  EPD-280-0-0.3-1 220 - 380 nm 0.056 mm² TO-46    
  EPD-270-0-0.3-2 230 - 285 nm 0.056 mm² TO-39    
  EPD-365-0/0.9 245 - 405 nm 0.51 mm² TO-46 UG11 filter  
  EPD-365-0/1.4 245 - 405 nm 1.2 mm² TO-46 UG11 filter  
  EPD-365-0/2.5 245 - 405 nm 4.8 mm² TO-39 UG11 filter  
  EPD-365-0/3.6 245 - 405 nm 10.9 mm² TO-39 UG11 filter  
  EPD-310-0-0.3-2 290 - 330 nm 0.056 mm² TO-39    
  EPD-360-0-0.3-2 230 - 400 nm 0.056 mm² TO-39    

UV Photodiodes TiO2

UV photodiodes based on thin film TiO2 sensor technology

  Spectral range Package Note  
  UVD39 225 - 380 nm TO-39 peak at 300 nm, intrinsic visible blind  
  EryF 215 - 325 nm TO-18 peak at 300 nm, intrinsic visible blind, erythema sensor DIN5050  
  TW30SX 215 - 387 nm TO-18 peak at 300 nm, UV AB, intrinsic visible blind  
  TW30SY 215 - 387 nm TO-39 peak at 300 nm, intrinsic visible blind  
  TW30DZ 253 - 361 nm TO-46 peak at 300 nm, intrinsic visible blind  
  TW30DY 253 - 361 nm TO-39 peak at 300 nm, intrinsic visible blind  
  TW30DY2 260 - 362 nm TO-39 peak at 300 nm, UV AB, intrinsic visible blind  
  UV-sensor chip die 4.4 mm²     thin film sensor  
  UV-sensor chip die 15.66 mm²     thin film sensor  
型号/规格

SSD-601 UV紫外线传感器

品牌/商标

HONEYWELL(霍尼韦尔)