|
砷化镓FET芯片和HEMT芯片
|
|
--通用砷化镓场效应晶体管(FET)芯片
|
|
--低噪音高电子迁移率晶体管(HEMT)芯片
|
|
*噪音已封装HEMT
|
|
--*噪音已封装高电子迁移率晶体管(HEMT)
|
|
分立砷化镓FET
|
|
--通用砷化镓场效应晶体管(FET)
|
|
--移动通信用L波段高功率砷化镓场效应晶体管(FET)
|
|
--通用功率砷化镓场效应晶体管(FET)芯片
|
|
内部匹配型功率FET
|
|
--低失真内部匹配型砷化镓场效应晶体管(FET)
|
|
砷化镓MMIC
|
|
--移动通信用单片微波集成电路(MMIC)驱动放大器
|
|
--14GHz波段VSAT用单片微波集成电路(MMIC)功率放大器
|
|
--准毫米波单片微波集成电路(MMIC)
|
|
--直播卫星(DBS)用单片微波集成电路(MMIC)
|
|
--砷化镓微波分频器(Prescalar)集成电路
|
|
GaAs FET Chips and HEMT Chips
|
|
GaAs FET Chips for General Purpose Applications
|
|
Part Number
|
Output Power at 1dB G.C.P
P 1dB (t*)
(dBm)
|
Power Gain at 1dB G.C.P
G 1dB (t*)
(dB)
|
Power-added Efficiency
η add (t*)
(%)
|
frequency
f
(GHz)
|
Drain Source Voltage
V DS
(V)
|
Drain Source Current
I DS
(mA)
|
Chip T*e
|
Frequency Band
|
|
FLC087XP
|
28.5
|
7.0
|
31.5
|
8.0
|
10
|
180
|
XP
|
C
|
|
FLC157XP
|
31.5
|
6.0
|
29.5
|
8.0
|
10
|
360
|
XP
|
|
FLC307XP
|
34.8
|
9.5
|
37.0
|
4.0
|
10
|
720
|
XP
|
|
FSX017X
|
21.5
|
11.0
|
42.0
|
8.0
|
8
|
38
|
X
|
X
|
|
FSX027X
|
24.5
|
10.0
|
41.0
|
8.0
|
8
|
77
|
X
|
|
FLX257XV
|
33.5
|
7.5
|
31.0
|
10.0
|
10
|
600
|
XV
|
|
FLK017XP
|
20.5
|
8.0
|
26.0
|
14.5
|
10
|
36
|
XP
|
Ku
|
|
FLK027XV *
|
24.0
|
7.0
|
32.0
|
14.5
|
10
|
60
|
XP/XV
|
|
FLK057XV
|
27.0
|
7.0
|
32.0
|
14.5
|
10
|
120
|
XV
|
|
FLK107XV
|
30.0
|
6.5
|
31.0
|
14.5
|
10
|
240
|
XV
|
|
FLK207XV
|
32.5
|
6.0
|
27.0
|
14.5
|
10
|
480
|
XV
|
|
|
X
|
Conventional
|
|
XP
|
Plated Heat Sink
|
|
XV
|
Via Hole PHS
|
|
|
|
* : XP also available
|
|
|
|
|
|
back to *
|
|
|
|
HEMT Chips for Low Noise Applications
|
|
Part Number
|
Noise Figure
NF (t*)
(dB)
|
Associated Gain
Gas (t*)
(dB)
|
frequency
f
(GHz)
|
Drain Source Voltage
V DS
(V)
|
Drain Source Current
I DS
(mA)
|
Frequency Band
|
|
FHX04X
|
0.75
|
10.5
|
12.0
|
2
|
10
|
X/Ku
|
|
FHX05X
|
0.9
|
10.5
|
12.0
|
2
|
10
|
|
FHX06X
|
1.10
|
10.5
|
12.0
|
2
|
10
|
|
FHX13X
|
0.45
|
13.0
|
12.0
|
2
|
10
|
|
FHX14X
|
0.55
|
13.0
|
12.0
|
2
|
10
|
|
FHX35X
|
1.20
|
10.0
|
12.0
|
3
|
10
|
|
FHX45X
|
0.55
|
12.0
|
12.0
|
2
|
10
|
|
FHR02X
|
1.0
|
9.0
|
18.0
|
2
|
10
|
K
|
|
FHR20X
|
0.75
|
10.0
|
18.0
|
2
|
5
|
|
|
back to *
|
|
Super Low Noise Packaged HEMTs
|
|
Super Low Noise Packaged HEMT (High Electron Mobility Transistor)
|
|
Part Number
|
Noise Figure
NF (t*)
(dB)
|
Associated Gain
Gas (t*)
(dB)
|
frequency
f
(GHz)
|
Drain Source Voltage
V DS
(V)
|
Drain Source Current
I DS
(mA)
|
Package T*e
|
Frequency Band
|
|
FH*0LG
|
0.30
|
15.5
|
4.0
|
2
|
10
|
LG
|
C
|
|
FHX13LG
|
0.45
|
13.0
|
12.0
|
2
|
10
|
LG
|
X/Ku
|
|
FHX14LG
|
0.55
|
13.0
|
12.0
|
2
|
10
|
LG
|
|
FHX04LG
|
0.75
|
10.5
|
12.0
|
2
|
10
|
LG
|
|
FHX05LG
|
0.90
|
10.5
|
12.0
|
2
|
10
|
LG
|
|
FHX06LG
|
1.10
|
10.5
|
12.0
|
2
|
10
|
LG
|
|
FHX35LG
|
1.20
|
10.0
|
12.0
|
3
|
10
|
LG
|
|
Tc(op) = +25C, All measurement values are shown as standard values
Note: FSU01LG, FSU02LG, and FSX017LG devices are short lead.
|
|
back to *
|
|
Discrete GaAs FETs
|
|
General Purpose GaAs FET
|
|
Part Number
|
Test Condition1
|
Output power at
1dB G.C.P
P 1dB
(dBm)
|
Power Gain at
1dB G.C.P
G 1dB
(dB)
|
Test Condition2
|
Noise Figure
NF
Condition2
|
Associated Gain
Gas
Condition2
|
Package
|
Application
|
|
FSU01LG
|
f=2GHz
V DS =6V
I DS =40mA
|
20
|
19
|
f=2GHz
V DS =3V
I DS =10mA
|
0.55
|
18.5
|
LG
|
Medium Power Amplifier
|
|
FSU02LG
|
f=2GHz
V DS =6V
I DS =80mA
|
23
|
17
|
f=2GHz
V DS =3V
I DS =20mA
|
1.5
|
17.5
|
LG
|
|
FSX027WF
|
f=8GHz
V DS =8V
I DS =77mA
|
24.5
|
10
|
-
|
-
|
-
|
WF
|
|
FSX017WF
|
f=8GHz
V DS =8V
I DS =39mA
|
21.5
|
11
|
-
|
-
|
-
|
WF
|
|
FSX56LP
|
f=10GHz
V DS =3V
I DS =30mA
|
15
|
6
|
-
|
-
|
-
|
LP
|
BS Oscillator
|
|
FSX017LG
|
f=12GHz
V DS =4V
I DS =30mA
|
16
|
8
|
-
|
-
|
-
|
LG
|
Medium Power Amplifier
|
|
*1: Internally matched t*e; *2: Push-pull FET t*e; *3: Pout; *4: GL (*all signal gain); *5: I DS (DC)
Note: Tc = +25C. All measurement values are shown as standard values.
|
|
back to *
|
|
L-band GaAs-FET for Mobile Communication System
|
|
Part number
|
Band
|
Output Power at 1dB
G.C.P
P 1dB
|
Power Gain at 1dB
G.C.P
G 1dB
|
Power Added Efficiency
η add
(%)
|
frequency
f
(GHz)
|
Drain-Source Voltage
V DS
(V)
|
Drain Current
I DS
(mA)
|
Thermal Resistance
(癈/W)
|
package
t*e
|
Feature.
Application
|
|
FLU10XM
|
L
|
29.5
|
13.5
|
47
|
2
|
10
|
180
|
25
|
XM
|
High gain, surface mount package
|
|
FLU17XM
|
32.5
|
12.5
|
46
|
2
|
360
|
15
|
|
FLU35XM
|
35.5
|
11.5
|
46
|
2
|
720
|
7.5
|
|
FLL107ME
|
29.5
|
13.5
|
47
|
2.3
|
180
|
25
|
ME
|
High gain
High Output Amplifier
|
|
FLL177ME
|
32.5
|
12.5
|
46
|
2.3
|
360
|
15
|
|
FLL357ME
|
33.5
|
11.5
|
46
|
2.3
|
720
|
7.5
|
|
FLL57MK
|
36
|
11.5
|
37
|
2.3
|
990
|
6.2
|
MK
|
|
FLL120MK
|
40
|
10.0
|
40
|
2.3
|
2200
|
3.3
|
|
FLL200IB-1 *1
|
42.5
|
13.0
|
35
|
1.5
|
4800
|
1.6
|
IB
|
|
FLL200IB-2 *1
|
42.5
|
11.0
|
34
|
2.3
|
4800
|
1.6
|
|
FLL200IB-3 *1
|
42.5
|
11.0
|
34
|
2.6
|
4800
|
1.6
|
|
FLL300IL-1
|
44.5
|
13.0
|
45
|
0.9
|
6000
|
1.0
|
IL
|
|
FLL300IL-2
|
44.5
|
12.0
|
44
|
1.8
|
6000
|
1.0
|
|
FLL300IL-3
|
44.5
|
10.0
|
42
|
2.6
|
6000
|
1.0
|
|
FLL300IP-4 *2
|
44.5
|
8.0
|
40
|
3.6
|
6000 *5
|
1.0
|
IP
|
Push-pull t*e.
High gain, high output amplifier
|
|
FLL310IQ-3A *2
|
45.0
|
9.0
|
40
|
2.7
|
7000
|
1.0
|
IQ
|
|
FLL400IP-2 *2
|
45.5
|
10.0
|
44
|
1.96
|
12
|
2000 *5
|
1.0
|
IP
|
|
FLL400IP-3 *2
|
45.5
|
9.0
|
43
|
2.5
|
2000 *5
|
1.0
|
|
FLL600IQ-2 *2
|
48
|
10.5
|
43
|
1.96
|
4000 *5
|
0.8
|
IQ
|
|
FLL600IQ-2C *2
|
48.0 *3
|
12.0 *4
|
51
|
2.17
|
1500 *5
|
0.8
|
|
FLL600IQ-3 *2
|
48.0
|
10.0
|
43
|
2.7
|
4000 *5
|
0.8
|
|
FLL800IQ-2C *2
|
49.0 *3
|
11.0 *4
|
50
|
2.17
|
2000 *5
|
0.8
|
|
FLL810IQ-3C *2
|
49.0 *3
|
12.0 *4
|
50
|
2.6
|
5000
|
0.8
|
|
FLL810IQ-4C *2
|
49.0 *3
|
9.5 *4
|
45
|
3.6
|
5000
|
0.8
|
|
FLL1200IU-2 *2
|
50.8 *3
|
11.0 *4
|
44
|
1.96
|
5000
|
0.6
|
IU
|
|
FLL1200IU-3 *2
|
50.8 *3
|
11.0 *4
|
44
|
2.5
|
5000
|
0.6
|
|
FLL1500IU-2C *2
|
51.8 *3
|
12.0 *4
|
48
|
2.17
|
4000 *5
|
0.55
|
|
FLL2400IU-2C *2
|
53.8 *3
|
11.5 *4
|
-
|
2.17
|
6000 *5
|
0.45
|
|
|
*1 : Input Matched
|
|
back to *
|
|
General Purpose Power GaAs-FET
|
|
Part Number
|
Output Power at 1dB G.C.P
P 1dB (t*)
(dBm)
|
Power Gain at 1dB G.C.P
G 1dB (t*)
(dB)
|
Power-added Efficiency
η add (t*)
(%)
|
frequency
f
(GHz)
|
Drain Source Voltage
V DS
(V)
|
Drain Source Current
I DS
(mA)
|
Thermal Resistance
R th (t*)
(癈/W)
|
Package T*e
|
Frequency Band
|
|
FLC057WG
|
27.0
|
9.0
|
38.0
|
8.0
|
10
|
120
|
27
|
WG
|
C
|
|
FLC097WF
|
28.8
|
8.5
|
35.0
|
6.0
|
10
|
180
|
25
|
WF
|
|
FLC107WG
|
30.0
|
8.0
|
36.0
|
8.0
|
10
|
240
|
16
|
WG
|
|
FLC167WF
|
31.8
|
7.5
|
35.0
|
6.0
|
10
|
360
|
15
|
WF
|
|
FLC257MH-6 *1
|
34.0
|
9.0
|
36.0
|
6.4
|
10
|
600
|
8
|
MH
|
|
FLC257MH-8 *1
|
34.0
|
8.0
|
35.0
|
8.5
|
10
|
600
|
8
|
MH
|
|
FLC317MG-4 *1
|
34.8
|
9.5
|
37.0
|
4.2
|
10
|
720
|
8
|
MG
|
|
FLX107MH-12 *1
|
30.0
|
7.5
|
33.0
|
12.5
|
10
|
240
|
15
|
MH
|
X
|
|
FLX207MH-12 *1
|
32.5
|
7.0
|
28.0
|
12.5
|
10
|
480
|
10
|
MH
|
|
FLK017WF
|
20.5
|
7.5
|
26.0
|
14.5
|
10
|
36
|
65
|
WF
|
Ku
|
|
FLK027WG
|
24.0
|
7.0
|
32.0
|
14.5
|
10
|
60
|
40
|
WG
|
|
FLK057WG
|
27.0
|
7.0
|
32.0
|
14.5
|
10
|
120
|
20
|
WG
|
|
FLK107MH-14 *1
|
30.0
|
6.5
|
31.0
|
14.5
|
10
|
240
|
15
|
MH
|
|
FLK207MH-14 *1
|
32.5
|
6.0
|
27.0
|
14.5
|
10
|
480
|
10
|
MH
|
|
|
back to *
|
|
Low Distortion Internally Matched GaAs-FET Characteristics
|
|
Part Number
|
Band
|
3rd Order Inter-modulation Distortion
IM3
(dBc)
|
Output Power at 1dB G.C.P
P 1dB
(dBm)
|
Power Gain at 1dB G.C.P
G 1dB
(dB)
|
Power added Efficiency
|
Frequency
f
(GHz)
|
Drain-Source Voltage
V DS (V)
|
Drain Current
I DS (mA)
|
Thermal Resistance
(癈/W)
|
Package
|
Special Application
|
FLM3135-4F
FLM3135-8F
FLM3135-12F
FLM3135-18F
|
S
|
-45
-45
-45
-45
|
36.5
39.5
41.5
43
|
12
11
11.5
10.5
|
38
37
40
37
|
3.1~3.5
3.1~3.5
3.1~3.5
3.1~3.5
|
10
|
1100
2200
3400
4800
|
5
3
2.3
1.6
|
IB
IB
IK
IK
|
High output amplifier
Impedance matched = 50Ω
External circuit not required
Each is designed for standard communication frequency band
|
FLM3439-4F
FLM3439-8F
FLM3439-12F
FLM3439-18F
FLM3439-25F
|
-46
-46
-46
-46
-46
|
36.5
39.5
41.5
43
44.5
|
12
11
11.5
10.5
10.5
|
38
37
40
37
41
|
3.4~3.9
3.4~3.9
3.4~3.9
3.4~3.9
3.4~3.9
|
1100
2200
3400
4800
6800
|
5
3
2.3
1.6
1.4
|
IB
IB
IK
IK
IK
|
FLM3742-4F
FLM3742-8F
FLM3742-12F
FLM3742-18F
FLM3742-25F
|
C
|
-46
-46
-46
-46
-46
|
36.5
39.5
41.5
43
44.5
|
12
11
11.5
10.5
10.5
|
38
37
40
37
41
|
3.7~4.2
3.7~4.2
3.7~4.2
3.7~4.2
3.7~4.2
|
1100
2200
3250
4800
6200
|
5
3
2.3
1.6
1.4
|
IB
IB
IK
IK
IK
|
|
FLM4450-4F
FLM4450-8F
FLM4450-12F
FLM4450-18F
FLM4450-25F
|
-46
-46
-46
-46
-46
|
36.5
39.5
41.5
43
44.5
|
11
10
10.5
9.5
9.5
|
37
36
39
36
40
|
4.4~5.0
4.4~5.0
4.4~5.0
4.4~5.0
4.4~5.0
|
1100
2200
3250
4800
6200
|
5
3
2.3
1.6
1.4
|
IB
IB
IK
IK
IK
|
FLM5359-4F
FLM5359-8F
FLM5359-12F
FLM5359-18F
FLM5359-25F
|
-46
-46
-46
-46
-46
|
36.5
39.5
41.5
43
44.5
|
10.5
9.5
9.5
8.5
8.5
|
37
36
38
35
39
|
5.3~5.9
5.3~5.9
5.3~5.9
5.3~5.9
5.3~5.9
|
1100
2200
3250
4800
6200
|
5
3
2.3
1.6
1.4
|
IB
IB
IK
IK
IK
|
FLM5964-4F
FLM5964-6F
FLM5964-8F
FLM5964-12F
FLM5964-18F
FLM5964-25F
|
-46
-46
-46
-46
-46
-46
|
36.5
38.5
39.5
41.5
43
44.5
|
10
10
10
10
10
10
|
37
37
37
37
37
37
|
5.9~6.4
5.9~6.4
5.9~6.4
5.9~6.4
5.9~6.4
5.9~6.4
|
1100
1625
2200
3250
4875
6500
|
5
4
3
2.3
1.6
1.4
|
IB
IB
IB
IK
IK
IK
|
|
FLM5972-8F
|
-45
|
39.0
|
8.5
|
31
|
5.9~7.2
|
2200
|
3.0
|
IB
|
FLM6472-4F
FLM6472-6F
FLM6472-8F
FLM6472-12F
FLM6472-18F
FLM6472-25F
|
-46
-46
-46
-46
-46
-46
|
36.5
38.5
39.5
41.5
43
44.5
|
9.5
9.5
9.5
9.5
9.5
9.5
|
36
37
36
37
37
38
|
6.4~7.2
6.4~7.2
6.4~7.2
6.4~7.2
6.4~7.2
6.4~7.2
|
1100
1625
2200
3250
4875
6500
|
5
4
3
2.3
1.6
1.4
|
IB
IB
IB
IK
IK
IK
|
FLM7179-4F
FLM7179-6F
FLM7179-8F
FLM7179-12F
FLM7179-18F
|
-46
-46
-46
-46
-46
|
36.5
38.5
39.5
41.5
42.5
|
9
9
9
9
8
|
35
34
35
38
30
|
7.1~7.9
7.1~7.9
7.1~7.9
7.1~7.9
7.1~7.9
|
1100
1625
2200
3250
4875
|
5
4
3
2.3
1.6
|
IB
IB
IB
IK
IK
|
FLM7185-6F
FLM7185-12F
|
-45
-45
|
38.0
41.0
|
8
8
|
30
30
|
7.1~8.5
7.1~8.5
|
1625
3500
|
4
2.3
|
IB
IK
|
FLM7785-4F
FLM7785-6F
FLM7785-8F
FLM7785-12F
|
-46
-46
-46
-46
|
36.5
38.5
39.5
41.5
|
8.5
8.5
8.5
8.5
|
35
31
34
34
|
7.7~8.5
7.7~8.5
7.7~8.5
7.7~8.5
|
1100
1755
2200
3500
|
5
4
3
2.3
|
IB
IB
IB
IK
|
FLM8596-4F
FLM8596-8F
FLM8596-12F
|
X,
Ku
|
-45
-45
-45
|
36.5
39.0
40.5
|
7.5
7.5
7.5
|
29
29
25
|
8.5~9.6
8.5~9.6
8.5~9.6
|
1100
2200
3600
|
5
3
2.3
|
IA
IB
IB
|
FLM0910-3F
FLM0910-4F
FLM0910-8F
|
-46
-46
-46
|
35
36
39
|
7.5
7.5
7.5
|
29
29
29
|
9.5~10.5
9.5~10.5
9.5~10.5
|
900
1100
2200
|
5
5
3
|
IA
IA
IB
|
FLM1011-3F
FLM1011-4F
FLM1011-6F
FLM1011-8F
FLM1011-12F
|
-46
-46
-45
-46
-45
|
35
36
37.5
39
40.5
|
7.5
7
7.5
7
6
|
29
29
28
29
25
|
10.7~11.7
10.7~11.7
10.7~11.7
10.7~11.7
10.7~11.7
|
900
1100
1800
2200
3600
|
5
5
4
3
2.3
|
IA
IA
IA
IB
IB
|
FLM1213-4F
FLM1213-6F
FLM1213-8F
FLM1213-12F
|
-46
-45
-46
-45
|
36
37.5
39
40.5
|
6.5
7
6.5
5.5
|
28
27
28
24
|
12.7~13.2
12.7~13.2
12.7~13.2
12.7~13.2
|
1100
1800
2200
3600
|
5
4
3
2.3
|
IA
IA
IA
IB
|
FLM1314-3F
FLM1314-6F
|
-45
-45
|
35
37.5
|
5.5
5.5
|
25
22
|
13.75~14.5
13.75~14.5
|
900
1800
|
5
4
|
IA
IA
|
FLM1414-3F
FLM1414-4F
FLM1414-6F
FLM1414-8F
FLM1414-12F
|
-46
-46
-46
-46
-
|
35
36
37.5
39
40.5
|
6.5
6
6.5
6
5
|
27
27
24
27
23
|
14.0~14.5
14.0~14.5
14.0~14.5
14.0~14.5
14.0~14.5
|
900
1100
1800
2200
3600
|
5
5
4
3
2.3
|
IA
IA
IA
IA
IB
|
FLM1415-3F
FLM1415-6F
|
-45
-45
|
34.5
37
|
5.5
5.5
|
23
20
|
14.5~15.3
14.5~15.3
|
900
1800
|
5
4
|
IA
IA
|
|
|
Note: Tc= +25C. All measurement values are shown as standard values.
|
|
back to *
|
|
Driver Amplifier MMIC for Mobile Communication
|
|
Part Number
|
frequecy
f
GHz
|
Output power at 1dB G.C.P
P 1dB
dBm (t*.)
|
*all signal gain
G
dB
|
Gain Flatness
ΔG
dB (t*.)
|
DC Input Current
I DD / I GG
mA
|
Feature
|
|
FMM5027VJ
|
0.8~3.0
|
26
|
19
|
2
|
220/2
|
broad band, high output
|
|
FMM5046VF
|
2.2
|
36
|
30
|
-
|
1700/35
|
high output
|
|
FMM5049VT
|
2.2
|
41 *1
|
33
|
-
|
2500/7
|
high output
|
|
|
Note *1 : Pout;
|
|
back to *
|
|
Power Amplifier MMIC for 14GHz Band VSAT
|
|
Part Number
|
frequecy
f
GHz
|
Output power at 1dB G.C.P
P 1dB
dBm (t*.)
|
Linear Gain
G
dB (t*.)
|
Gain Flatness
ΔG
dB (t*.)
|
|
FMM5010VF
|
14.0~14.5
|
21
|
25
|
1.0
|
|
FMM5017VF
|
14.0~14.5
|
29
|
20
|
1.0
|
|
FMM5007VF
|
14.0~14.5
|
31
|
20
|
1.0
|
|
FMM5522GJ
|
14.0~14.5
|
35
|
26 *1
|
2.0 *3
|
|
FMM5051VF
|
13.75~14.5
|
31.5 *2
|
31.5
|
1.5
|
|
FMM5048GJ
|
13.75~14.5
|
36
|
26 *1
|
3.0 *3
|
|
|
*1 : G1dB; *2 : Pout (Pin=3dBm); *3 : Maximum;
|
|
back to *
|
|
Quasi Millimeter-Wave MMIC
|
|
Power Amplifier MMIC for VSAT Characteristics
|
|
T*e
|
Frequency Range
(GHz)
|
Drain Voltage
V DD (V)
|
Output Power at 1dB G.C.P
P1dB (dBm)
|
Power Gain at 1dB G.C.P
G1dB (dB)
|
Power Added Efficiency
η add (%)
|
|
FMM5802X
|
27.5~31.5
|
6
|
25.5
|
9
|
20
|
|
FMM5803X
|
27.5~30.0
|
30 *2
|
14
|
20 *2
|
|
30.0~31.5
|
12
|
|
FMM5804X
|
17.5~30.0
|
25
|
18
|
18
|
|
30.0~31.5
|
23
|
|
FMM5805X
|
17.5~20.0
|
31
|
21
|
30
|
|
FMM5806X
|
24.0~27.0
|
26
|
9.5
|
25
|
|
FMM5807X
|
21.0~24.0
|
29
|
14 *1
|
20 *1
|
|
24.0~27.0
|
30
|
|
FMM5815X
|
17.5~20.0
|
31
|
21
|
30 *3
|
|
FMM5816X
|
37.0~42.0
|
25
|
14
|
20
|
|
*1: f=21.0~24.0GHz (t*.), *2: f=27.5~31.5GHz (t*.), *3: ηadd at P1dB
(All characteristic are t*ical value)
|
|
|
|
Quasi Millimeter-wave Power Amplifier (Package) Characteristics
|
|
T*e
|
Frequency Range
(GHz)
|
Drain Voltage
V DD (V)
|
Output Power at 1dB G.C.P
P1dB (dBm)
|
Power Gain at 1dB G.C.P
G1dB (dB)
|
Power Added Efficiency
η add (%)
|
|
FMM5805GJ-1
|
17.7~19.7
|
6
|
31
|
20
|
27
|
|
FMM5807GJ-1
|
21.2~23.6
|
29
|
13
|
18
|
|
FMM5815GJ-1
|
17.7~19.7
|
31
|
20
|
25
|
|
FMM5811GJ-1
|
17.7~23.6
|
24.5
|
15
|
20
|
|
FMM5815GJ-1
|
17.7~19.7
|
31
|
20
|
25
|
|
|
|
|
Quasi Millimeter-wave Low Noise Amplifier Characteristics
|
|
T*e
|
Frequency Range
(GHz)
|
Drain Voltage
VDD (V)
|
Noise Figure
NF (dB)
|
Associated Gain
Gas (dB)
|
Chip Size
(mm)
|
|
FMM5701X
|
18~28
|
5
|
1.5 *1
|
13.5 *1
|
0.45 x 0.52
|
|
FMM5702X
|
27~32
|
4
|
1.6 *2
|
13 *2
|
0.96 x 0.96
|
|
FMM5703X
|
24~32
|
3
|
2 *3
|
18 *3
|
1.56 x 1.16
|
|
FMM5704X
|
36~40
|
3
|
2 *4
|
18 *4
|
1.46 x 1.06
|
|
|
|
|
K~Ka Band Converter MMIC (Chip) Characteristics
|
|
T*e
|
Usable Frequency Range
(GHz)
|
Conversion Gain
(dB)
|
Associated Current
(mA)
|
Features
|
|
FMM5116X
|
20~32
|
-8
|
140
|
Built-in frequency multiplier
(times 2)
|
|
FMM5117X
|
-10
|
|
|
back to *
|
|
MMIC for DBS (Direct Broadcast Satellite)
|
|
Down Converter MMIC for DBS
|
FMM5107ML
|
|
|
FMM5107MLT4E1
|
|
Single Oscillator MMIC for DBS
|
FMM5202ML
|
|
Dual Oscillator MMIC for DBS
|
FMM5201ML
|
|
|
FMM5201MLT4E1
|
|
|
back to *
|
|
GaAs Microwave Frequency Divider (Prescalar) IC
|
|
Part Number
|
Power Supply
Current (t*.)
I SS (mA)
|
Operating Frequency Range
f
(GHz)
|
Supply Voltage
V DD (t*.)
(V)
|
Power Output
Po (t*.)
(dBm)
|
Ambient Temp. Range
(癈)
|
Package
|
|
FMM1061VJ *
|
120
|
2~6
|
5
|
4
|
-30 ~ +70
|
VJ
|
|
FMM1062ML *
|
20
|
2~6
|
3
|
-4
|
-40 ~ +85
|
ML
|
|
FMM106HG
|
140
|
2~6.5
|
5
|
4
|
-55 ~ +85
|
HG
|
|
FMM1103VJ *
|
90
|
2~12
|
5
|
8
|
-40 ~ +85
|
VJ
|
|
|
Note * : Part are available in Tape and Reel.
|
详细资料目录/应用资料下载 2、 
