介质种类Dielectric T*e | I类介质Cl* I | II类介质Cl* II |
介质材料Dielectric Material | 温度补偿型TemperatureCompensating | X7R (B) | Z5U(E) | Y5V(Y/F) |
电气性能ElectricalProperties | 电气性能*稳定,几乎不随温度、电压和时间的变化而变化。The electricalproperties is themost stable one andhas little changewith temperature,voltage and time. | 具有较高的介电常数,容量可做到比I类电容器高,具有稳定的温度特性。X7R material has highdielectric constant,and its capacitance ishigher than cl* I.These capacitors arecl*ified as having asemi-stable T.C.. | 温度特性介于X7R和Y5V之间,容量稳定性相对较差,对温度、电压等条件较敏感。Temperaturecharacteristic isbetween that of X7Rand Y5V. Thecapacitance isunstable and sensibleto temperature andvoltage. | 介电常数*大,但温度特性较差,对温度、电压等条件较敏感。Y5V material hashighest dielectricconstant. Itscapacitance anddissipation issensible totemperature andvoltage. |
应用Application | 适用于低损耗,稳定性要求高的高频电路,如滤波器、振动器和计时电路等。Used inapplications wherelow-losses andhigh-stability arerequired, such asfilters, oscillators,and timing circuitsso on. | 适用于容量范围广,稳定性要求不高的电路中,如隔直、耦合、旁路及鉴频等电路中。Used over a widetemperature range ,such in these kinds ofcircuits, DC-blocking,coupling, b**ing,frequencydiscriminating etc. | 适用于要求大容量,使用温度范围接近于室温的旁路、耦合等,及低直流偏压电路中。Ideally suited forb**ing andcoupling applicationcircuits operatingwith low DC bias inthe environmentapproaching to roomtemperature. | 适用于要求大容量,温度变化不大的电路中Used over amoderatetemperature rangein applicationwhere highcapacitance isrequired. |
容量范围Availablecapacitance range | 0.5pF~4.7nF | 100pF~0.22uF | 2.2nF~1.2uF 项目Item | 技术要求Technical Specification | 测试方法和备注Test Method and Remarks | 容量Capacitance(C) | I类Cl* I | 应*合指定的误差级别 within the specified tolerance. | 标称容量Capacitance | 测试频率MeasuringFrequency | 测试电压MeasuringVoltage | ≤1000pF | 1MHZ&plu*n;10% | 1.0&plu*n;0.2V | >1000 pF | 1KHZ&plu*n;10% | II类Cl* II | 应*合指定的误差级别 within the specified tolerance. | 对于Ⅱ类电容器,测试前应先预处理The capacitance should be pretreated beforemeasured(only for cl*Ⅱ). | 测试频率MeasuringFrequency | 测试电压Measuring Voltage | 1KHZ&plu*n;10% | B:1.0&plu*n;0.2V | E/ Y/ F0.5&plu*n;0.2V | 损耗角正切DissipationFactor(DF) | I类Cl* I | CR≥50pFDF≤0.15%CR<50pFDF≤1.5[(150/CR) 7] X10-4 | 标称容量Capacitance | 测试频率MeasuringFrequency | 测试电压MeasuringVoltage | ≤1000pF | 1MHZ&plu*n;10% | 1.0&plu*n;0.2V | >1000 pF | 1KHZ&plu*n;10% | II类Cl* II | B | DF≤3.5% | 测试频率: 1KHZ&plu*n;10%; 测试电压: 1.0&plu*n;0.2VMeasuring Frequency Measuring Voltage | E/Y( F) | ≤7.5% (CR ≤0.1uF)≤10.0%(1uF>CR >0.1uF)≤15% (CR ≥1uF) | 测试频率: 1KHZ&plu*n;10%Measuring Frequency测试电压:0.5&plu*n;0.2VMeasuring Voltage | *缘电阻InsulationResistance | I类Cl* I | C≤10nFIR≥10000MΩC>10nFR.C≥100ΩF | 测试电压:额定电压Measuring Voltage: Rated Voltage测试时间: 60&plu*n;5秒Duration: 60&plu*n;5s | II类Cl* II | C≤25nFIR≥4000MΩC>25nFR.C≥100ΩF |
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