低压MOS，AO4606

Features
n-channel p-channel
VDS (V) = 30V -30V
ID = 6.9A -6A
RDS(ON) RDS(ON)
< 28mΩ (VGS=10V) < 35mΩ (VGS = 10V)
< 42mΩ (VGS=4.5V) < 58mΩ (VGS = 4.5V)General Description
The AO4606 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
to form a level shifted high side switch,
and for a host of other applications.