光宏10mil红光、反*性

光鋐科技股份有限公司
Epileds Technologies, Inc.
Product specification of 10 x 10 mil red LED chip
1. Scope:
This specification applies to AlInGaP metal bonding 10 x 10 mil red LED chip, BN-R1010A-A3。
2. Materials：
2.1 P-pad：Au alloy。
2.2 N-pad：Au alloy。
3. Dimensions：
3.1 Chip size：255μm x 255μm&plu*n;25μm。
3.2 P-pad： 90μm, thickness 3.5&plu*n;0.3μm。
3.3 Chip thickness：200μm&plu*n;25μm。
4. Electro-optical characteristics and specification: (Tc=25°C)
4.1 Electro-optical characteristics
Test parameter Condition Min T* Max Unit
Dominant wavelength(Wd) 20mA 600 - 680 nm
Luminous intensity(Iv) 20mA 50 - 650 mcd
Forward voltage(Vf1) 20mA 1.5 - 2.4 V
Reverse current (Ir) -10V 0 - 0.5 uA
Wd Iv Vf1 Ir
Bin nm Bin mcd (V) (uA)
R4 600~620 01 >300
R3 620~630 02 >50
R5 630~680
1.5~2.4 0~0.5
Rev.: 5/27/2010
* The detail technical and reliability datasheet are also available for your reference, please be free to contact us.