大中 Sinopower SM4912TSKC-TRG
地区:江苏 苏州
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Channel 1
30V/9A,
RDS(ON) = 27mW (max.) @ VGS = 10V
RDS(ON) = 33mW (max.) @ VGS = 4.5V
· Channel 2
30V/12A,
RDS(ON) = 14mW (max.) @ VGS =10V
RDS(ON) = 20mW (max.) @ VGS =4.5V
· Super High Dense Cell Design
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
CHIP/小型片状
SM4912TSKC-TRG
GE-N-FET锗N沟道
MOS-HBM/半桥组件
Sinopower
N沟道
*缘栅(MOSFET)
增强型
属性值