L177 微波器件，信号放大器器件，现货

L177 ,L171,L357，L351，L120，现货热卖

射频功率放大器、低噪声放大器、各类基站放大器、直放站、干线放大器、塔顶放大器器件

FEATUR*
• High Output Power: P1dB=32.5dBm (T*.)
• High Gain: G1dB=12.5dB (T*.)
• High PAE: ηadd=46% (T*.)
• Proven Reliability
• Hermetically Sealed Package
D*CRIPTION
The FLL177ME is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency *ior to that of silicon devices. The performance in
multitone environments for Cl* AB operation make them ideally suited
for base station applications. This device is *embled in hermetic
metal/ceramic package.
Fujitsu’s stringent Quality Assurance Program *ures the highest
reliability and consistent performance.

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