供应瑞萨IGBT单管 RJH60F5DPQ-A0

RJH60F5DPQ-A0  瑞萨  可以代替*童的FGH40N60SFD 英飞凌的IKW30N60T

Collector to emitter voltage VC* 600 V
Gate to emitter voltage VG* &plu*n;30 V
Collector current Tc = 25 °C IC 80 A
Tc = 100 °C IC 40 A
Collector peak current ic(peak) Note1 160 A
Collector to emitter diode forward peak current iDF(peak) Note2 100 A
Collector dissipation PC 260.4 W
Junction to case thermal impedance (IGBT) ?j-c 0.48 °C/W
Junction to case thermal impedance (Diode) ?j-cd 2.0 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to 150 °C