| Manufacturer: | Fairchild Semiconductor | |
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| Product: | General Purpose MOSFETs | |
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| Configuration: | Dual Dual Drain | |
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| Transistor Polarity: | N and P-Channel | |
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| Drain-Source Breakdown Voltage: | 60 V @ N Channel | |
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| Continuous Drain Current: | 1.3 A @ N Channel | |
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| Power Dissipation: | 2000 mW | |
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| Forward Transconductance gFS (Max / Min): | 1.7 S, 0.6 S | |
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| Resistance Drain-Source RDS (on): | 0.55 Ohm @ 10 V Ohm @ N Channel | |
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| T*ical Fall Time: | 17 ns @ N Channel | |
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| T*ical Rise Time: | 21 ns @ N Channel | |
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| T*ical Turn-Off Delay Time: | 11 ns @ N Channel | |
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| Gate-Source Breakdown Voltage: | /- 20 V | |
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| Maximum Operating Temperature: | 150 C | |
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| Minimum Operating Temperature: | - 55 C | |
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