ON*原装*贴片场效应MJD122T4G MJD122 J122G

ON*原装*贴片场效应MJD122T4G  MJD122  J122G

ON*原装*贴片场效应MJD122T4G  MJD122  J122G

MJD122T4G  MJD122  J122G产品规格  参数  PDF

Datasheets MJD122,127
Product Photos TO-252-3
Catalog Drawings Transistor DPAK
Standard Package 2,500
Category Discrete Semiconductor Products
Family Transistors (BJT) - Single
Series -
Transistor T*e NPN - Darlington
Current - Collector (Ic) (Max) 8A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
Power - Max 1.75W
Frequency - Transition 4MHz
Mounting T*e Surface Mount
Package / Case TO-252-3, DPak (2 Leads Tab), SC-63
Supplier Device Package DPAK-3
Packaging Tape & Reel (TR)
Catalog Page 1340 (US2011 Interactive)
1340 (US2011 PDF)
Other Names MJD122T4GOS
MJD122T4GOS-ND
MJD122T4GOSTR