FSC*童MOS场效应系列芯片 FQP70N10

FSC*童MOS场效应系列芯片  FQP70N10

FSC*童MOS场效应系列芯片  FQP70N10

FQP70N10产品规格  参数

Datasheets FQP70N10
Product Photos TO-220-3 Pkg
Product Training Modules High Voltage Switches for Power Processing
Catalog Drawings MOSFET TO-220 Pkg
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series QFET™
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25° C 57A
Rds On (Max) @ Id, Vgs 23 mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) @ Vds 3300pF @ 25V
Power - Max 160W
Mounting T*e Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Packaging Tube
Catalog Page 1386 (US2011 Interactive)
1386 (US2011 PDF)