FAIRCHILD*童*原装场效应管 FQP8N60C 8N60C 8N60

FAIRCHILD*童*原装场效应管 FQP8N60C  8N60C  8N60

FAIRCHILD*童*原装场效应管 FQP8N60C  8N60C  8N60

FQP8N60C  8N60C  8N60产品规格  参数

Datasheets FQP8N60C, FQPF8N60C
Product Photos TO-220-3 Pkg
Product Training Modules High Voltage Switches for Power Processing
Product Change Notification Design/Process Change Notification 26/June/2007
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series QFET™
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25° C 7.5A
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) @ Vds 1255pF @ 25V
Power - Max 147W
Mounting T*e Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Packaging Tube