【墨西哥原厂原装*MOS场效应管】IRF530N IRF530NPBF

【墨西哥原厂原装】IRF530N  IRF530NPBF  *MOS场效应管

【墨西哥原厂原装】IRF530N  IRF530NPBF  *MOS场效应管

IRF530N  IRF530NPBF 产品规格  参数

Datasheets IRF530NPbF
Product Photos TO-220AB PKG
Catalog Drawings IR Hexfet TO-220AB
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series HEXFET®
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25° C 17A
Rds On (Max) @ Id, Vgs 90 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 37nC @ 10V
Input Capacitance (Ciss) @ Vds 920pF @ 25V
Power - Max 70W
Mounting T*e Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Packaging Tube
Catalog Page 1297 (US2011 Interactive)
1297 (US2011 PDF)
Other Names *IRF530NPBF