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原装正品场效应管 IRFS4229PBF D2-Pak
原装正品场效应管 IRFS4229PBF D2-Pak
IRFS4229PBF产品规格 参数
Datasheets IRFS4229PBF
Product Photos D2PAK, TO-263
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series HEXFET®
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Rds On (Max) @ Id, Vgs 48 mOhm @ 26A, 10V
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25° C 45A
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) @ Vds 4560pF @ 25V
Power - Max 330W
Mounting T*e Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Packaging Tube
IR/国际整流器
IRFS4229PBF
结型(JFET)
N沟道
耗尽型
MW/微波
CER-DIP/陶瓷直插
ALGaAS铝镓砷
33(V)
22(V)
33(μS)
22(pF)
22(dB)
33(mA)
44(mW)