供应场效应MOSFET管 FDD5614P

地区:广东 深圳
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结型场效应管 深圳市福田区新亚洲电子市场二期嘉能源电子经营部

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本公司*经营世界名厂(IR ST FAIRCHILD VISHAY ZETEX infineon):二三*管 场效应管 精密稳压IC;欢迎来电咨询:  82567830  只做现货

FDD120AN15AOFAIRCHILD09 TO-252
FDD5612FAIRCHILD09 TO-252
FDD5614FAIRCHILD09 TO-252
FDD5614PFAIRCHILD09 TO-252
FDD5614PFAIRCHILD09 TO-252
FDD5670FAIRCHILD09 TO-252
FDD6030FAIRCHILD09 TO-252
FDD6030LFAIRCHILD09 TO-252
FDD6035FAIRCHILD09 TO-252
FDD6296FAIRCHILD09 TO-252
FDD6612FAIRCHILD09 TO-252
FDD6670FAIRCHILD09 TO-252
FDD6676FAIRCHILD09 TO-252
FDD6676FAIRCHILD09 TO-252
FDD6676FAIRCHILD09 TO-252
FDD6680FAIRCHILD09 TO-252
FDD6682FAIRCHILD09 TO-252
FDD6685FAIRCHILD09 TO-252
FDD6688FAIRCHILD09 TO-252
FDD6690FAIRCHILD09 TO-252
FDD6692FAIRCHILD09 TO-252
FDD6696FAIRCHILD09 TO-252
FDD7030FAIRCHILD09 TO-252
FDD7030BLFAIRCHILD09 TO-252
FDD8770FAIRCHILD09 TO-252
FDD8778FAIRCHILD09 TO-252
FDD8782FAIRCHILD09 TO-252
FDD8796FAIRCHILD09 TO-252
FDD8870FAIRCHILD09 TO-252
FDD8874FAIRCHILD09 TO-252
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FDD8882FAIRCHILD09 TO-252
FDD8896FAIRCHILD       09  TO-252
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品牌/商标

FAIRCHILD/*童

型号/规格

FDD5614P FDD5612

种类

结型(JFET)

沟道类型

N沟道

导电方式

耗尽型

用途

L/功率放大

封装外形

SMD(SO)/表面封装

材料

P-FET硅P沟道

开启电压

20(V)

夹断电压

-60V(V)

*间电容

759(pF)

漏*电流

-15A(mA)

耗散功率

42(mW)