场效应管NTP75N03RG-N沟道75A25V

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MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 25 Vdc
Gate−to−Source Voltage − Continuous VGS &plu*n;20 Vdc
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C
Drain Current
− Continuous @ TC = 25°C
− Single Pulse (tp = 10 s)
R JC
PD
ID
IDM
1.68
74.4
75
225
°C/W
W
AA
Thermal Resistance − Junction−to−Ambient
(Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
R JA
PD
ID
60
2.08
12.6
°C/W
WA
Thermal Resistance − Junction−to−Ambient
(Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
R JA
PD
ID
100
1.25
9.7
°C/W
WA
Operating and Storage Temperature Range TJ, Tstg −55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, IL = 12 Apk,
L = 1 mH, RG = 25 )
EAS 71.7 mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8, from Case for 10 Seconds
TL 260 °C