供应美格纳全系列场效应管

Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 600V
Lower RDS(ON) : 0.356 (T*.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R JC
R JA
Symbol Characteristic T*. Max. Units