供应四象限探测器(QP)
地区：浙江 杭州
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产品属性
相关推荐
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Quadrant photodiodes (low dark current)
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T*e No.
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Active area
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Dark current
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Rise time
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Chip
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Package
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Size
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Area
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10V
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850nm 10V 50Ω
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mm
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mm2
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nA
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ns
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QP1-6
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TO52
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Ø1.13
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4×0.25
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0.1
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20
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QP5-6
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TO5
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Ø2.52
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4×1.25
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0.2
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20
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QP5.8-6
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TO5
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2.4×2.4
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4×1.45
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0.4
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20
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QP10-6
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TO5
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Ø3.57
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4×2.5
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0.5
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20
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QP20-6
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TO8S
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Ø5.05
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4×5
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1
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30
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QP50-6
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TO8S
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Ø7.8
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4×12.5
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2
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40
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QP50-6
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TO8S flat
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Ø7.8
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4×12.5
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2
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40
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QP100-6
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LCC10G
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Ø11.2
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4×25
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4
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40
|
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QP100-6
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LCC10S
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Ø11.2
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4×25
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4
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40
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Quadrant photodiodes (fully depletable)
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|||||
|
T*e No.
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Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
10V
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905nm 10V 50Ω
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|
mm
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mm2
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nA
|
ns
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QP100-7
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LCC10G
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10×10
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4×25
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2
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50
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Quadrant photodiodes (for 1064nm)
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|
T*e No.
|
Active area
|
Dark current
|
Rise time
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||
|
Chip
|
Package
|
Size
|
Area
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150V
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1064nm 150V 50Ω
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mm
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mm2
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nA
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ns
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QP22-Q
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TO8S
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Ø5.3
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4×5.7
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1.5
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12
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QP45-Q
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TO8S
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6.7×6.7
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4×10.96
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8
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12
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QP45-Q
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LCC10G
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6.7×6.7
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4×10.96
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8
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12
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QP100-Q
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LCC10G
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10×10
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4×25
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6.5
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12
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QP154-Q
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TO1032i
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Ø14.0
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4×38.5
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10
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12
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QP154-Q
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TO1081i
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Ø14.0
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4×38.5
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10
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12
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