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OCXO Oven controlled Crystal Oscillators 恒温晶振
一、应用
通讯、航空、航天、军事、移动通信、数字程控交换机、网络传输、接入网、光传输、雷达、导航、电子对*、无线通信、测试设备、锁相环电路SDH、SONET、ATM、WLL、PCS基站、蜂窝基站、频率合成器
二、主要技术指标
1)Frequency Range 频率范围:1.00-200.00MHz
2.5MHz,3.2MHz,4.608MHz,4.096MHz,5MHz,5.12MHz,6.4MHz,6.5MHz,6.72996MHz,
8.192MHz,9.216MHz,10MHz,10.24MHz,12MHz,12.24MHz,12.288MHz,12.8MHz,13MHz,14.4MHz,
14.7456MHz,14.85MHz,16MHz,16.32MHz,16.368MHz ,16.384MHz,16.8MHz,17MHz,
18.432MHz,19.2MHz,19.44MHz,19.68MHz,19.7985MHz,19.8MHz,20MHz,20.46MHz,20.48MHz,
20.82857MHz,24MHz,24.576MHz,25MHz,25.6MHz,26MHz,26.451788MHz,27MHz,29.952MHz,
32MHz,32.768MHz,33MHz,36.864MHz,38MHz,38.88MHz,40MHz,50MHz,61.44MHz,77.76MHz,
100MHz,120MHz,122.88MHz,140MHz,160MHz,180MHz,200MHz
2)SC Cut OCXO AT Cut OCXO
3)Initial Calibration 频率准确度: A ≤±0.5ppm @
C ≤±0.05ppm @
4)Frequency Adjustment 频率调整: 1 ≥ ±0.5ppm 2 ≥ ±1.0ppm 3 ≥ ±3.0ppm
4 ≥ ±5.0ppm 5 ≥ ±7.0ppm 6 ≥ ±10ppm
5)Control Voltage压控电压 : 0 - 5V
6)Operating Temperature 工作温度范围: E 0-+
H -30-+
7)Frequency Stability 温度频率稳定度: 1 ppb = ppm 1/1000
K ±0.1ppm L ±0.05ppm M ±0.03ppm N ±0.02ppm
O ±0.01ppm P ±0.03ppm Q ±0.005ppm R ±0.001ppm
8)Output Waveform 输出波形: 1 HCMOS 2 TTL 3 ACMOS
4 Sine 输出电平 ≥+2dBm ≥+5dBm @ 50Ω
谐波抑制 ≤-20dBc ≤-30dBc @ 50Ω
杂波抑制 ≤-70dBc ≤-75dBc @ 50Ω
5 Clipped Sine ≥1Vp-p 10kΩ//10pF
9)Supply Voltage 工作电压范围: S 3.3V T 5.0V U 12.0V W 15.0V
10)Power Consumption 功耗:Warm up 开机 ≤3.5W-7.0W
@
11)Phase Noise 相位噪声:
Frequency |
10Hz |
100Hz |
1kHz |
10kHz |
100kHz |
10.0MHz |
–1120dBc/Hz |
–150dBc/Hz |
–160dBc/Hz |
–165dBc/Hz |
–170dBc/Hz |
10.0MHz |
–120dBc/Hz |
–140dBc/Hz |
–150dBc/Hz |
–155dBc/Hz |
–160dBc/Hz |
10.0MHz |
–115dBc/Hz |
–135dBc/Hz |
–145dBc/Hz |
–150dBc/Hz |
–155dBc/Hz |
10.0MHz |
–100dBc/Hz |
–130dBc/Hz |
–140dBc/Hz |
–145dBc/Hz |
–150dBc/Hz |
12)Ageing 频率老化率: ±0.1ppm maximum in first year ±1.0ppm maximum for 10 years
±0.5ppm maximum in first year ±2.0ppm maximum for 10 years
|
VC-OCXO OCXO |
Size(mm) |
DIP 36.0X27.0X |
|
AT CUT SC CUT |
Output Frequency Range |
1-100 MHz |
Freq Stability Calibration |
≤±0.05ppm (with frequency adjustment) |
Vs. Temperature |
±0.03ppm ±0.05ppm ±0.1ppm ±0.2ppm ±0.005ppm ±0.01ppm ±0.02ppm |
|
0 |
Vs. Supply Voltage |
≤±0.005ppm |
Vs. Load Variation |
≤±0.005ppm |
Vs.Aging |
±0.003ppm/day ±0.3ppm/year ±0.0005ppm/day ±0.05ppm/year |
Supply Voltage (Vdd) |
+5VDC +9VDC +12VDC |
Output Level |
Sinewave HCMOS TTL |
Frequency Adjustment |
±2.0ppm/0-5V ±0.5ppm/0-5V |
Phase Noise 10MHz |
10Hz -115dBc/Hz@1KHz 100Hz -135dBc/Hz@1KHz 1kHz -145dBc/Hz@1KHz 10kHz -150dBc/Hz@1KHz |
Supply Consumption |
4.5W(max) when warm-up 1.5W(max) @ |
Warm-up Time |
±0.05ppm,<5min ±0.02ppm,<5min |
| |
|
VC-OCXO OCXO |
Size(mm) |
DIP 25.0X25.0X |
|
AT CUT SC CUT |
Output Frequency Range |
1-100 MHz |
Freq Stability Calibration |
≤±0.1ppm (with frequency adjustment) |
Vs. Temperature |
±0.05ppm ±0.1ppm ±0.2ppm ±0.01ppm ±0.02ppm ±0.03ppm ±0.05ppm |
|
0 |
Vs. Supply Voltage |
≤±0.005ppm |
Vs. Load Variation |
≤±0.005ppm |
Vs.Aging |
±0.003ppm/day ±0.3ppm/year ±0.001ppm/day ±0.1ppm/year |
Supply Voltage (Vdd) |
+5VDC +9VDC +12VDC |
Output Level |
Sinewave HCMOS TTL |
Frequency Adjustment |
±2.0ppm/0-5V ±0.5ppm/0-5V |
Phase Noise 10MHz |
10Hz -115dBc/Hz@1KHz 100Hz -135dBc/Hz@1KHz 1kHz -145dBc/Hz@1KHz 10kHz -150dBc/Hz@1KHz |
Supply Consumption |
3.6W(max) when warm-up 1.2W(max) @ |
Warm-up Time |
±0.05ppm,<5min ±0.02ppm,<5min |
|
|
|
VC-OCXO OCXO |
Size(mm) |
DIP 21.0X13.0X |
Output Frequency Range |
1-100 MHz |
Freq Stability Calibration |
≤±0.5ppm (with frequency adjustment) |
Vs. Temperature |
±0.05ppm ±0.1ppm ±0.2ppm ±0.3ppm |
|
0 |
Vs. Supply Voltage |
≤±0.05ppm |
Vs. Load Variation |
≤±0.05ppm |
Vs.Aging |
±0.01ppm/day ±0.5ppm/year |
Supply Voltage (Vdd) |
+5VDC +9VDC +12VDC |
Output Level |
Sinewave HCMOS TTL |
Frequency Adjustment |
±2.0ppm/0-5V |
Phase Noise 10MHz |
10Hz -110dBc/Hz@1KHz 100Hz -130dBc/Hz@1KHz 1kHz -140dBc/Hz@1KHz 10kHz -145dBc/Hz@1KHz |
Supply Consumption |
3.6W(max) when warm-up 1.2W(max) @ |
Warm-up Time |
±0.5ppm,<2min |
13)Package Outline 封装、尺寸:
N DIP 21*13*
R DIP 36*27*
Ractron
Ractron
无铅*型
直插式
工业电子电气设备