2N6314 三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-80

V

V_CEO

Collector-Emitter Voltage                        

-80

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-5

A

I_CM

Collector Current-Peak

-10

A

I_B

Base Current-Continuous

-2

A

P_C

Collector Power Dissipation

@ T_C=25℃

75

W

T_J

JunctionTemperature

200

℃

T_stg

StorageTemperature Range

-65~200

℃

SY*OL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

2.32

℃/W

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= -100mA; I_B= 0

-80

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= -1.5A; I_B= -0.15A

-0.7

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= -3A; I_B= -0.3A

-2.0

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -5A; I_B= -1.25A

-4.0

V

V_BE(on)

Base-Emitter On Voltage

I_C= -1.5A ; V_CE= -2V

-1.4

V

I_CEX

Collector Cutoff Current

V_CE=-80V;V_BE(off)= 1.5V

V_CE=-80V;V_BE(off)= 1.5V;T_C=125℃

-0.1

-1.0

mA

I_CEO

Collector Cutoff Current

V_CE= -70V; I_B= 0

-1.0

mA

I_CBO

Collector Cutoff Current

V_CB= -80V; I_E= 0

-50

μA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-0.5

mA

h_FE-1

DC Current Gain

I_C= -0.5A ; V_CE= -2V

40

h_FE-2

DC Current Gain

I_C= -1.5A ; V_CE= -2V

25

100

h_FE-3

DC Current Gain

I_C= -3A ; V_CE= -2V

10

h_FE-4

DC Current Gain

I_C= -5A ; V_CE= -4V

4

f_T

Current-Gain—Bandwidth Product

I_C= -0.5A; V_CE= -10V, f_test= 1MHz

4

MHz

C_OB

Output Capacitance

I_E= 0;V_CB= -10V; f_test= 0.1MHz

300

pF