Features
• Advanced GaAs E-pHEMT
• Low Noise: 0.8 dB t*
• High Gain : 14.3 dB t*
• Low component count
• High IIP3 and IP1dB
• Wide Supply Voltage: 1V to 3.6V
• Shutdown current : < 0.1uA
• CMOS compatible shutdown pin
(VSD) current @ 2.85V : 90uA
• Adjustable bias current via one
single external resistor/voltage
• Small Footprint: 2x2mm2
• Low Profile: 1.1mm t*
• Ext matching for non-GPS freq
band operation
Specifications (25 deg):
At 1.575GHz, 2.85V 8mA (T*)
• Gain = 14.3 dB (T*)
• NF = 0.8 dB (T*)
• IIP3 = 4.7 dBm (T*)
• IP1dB = 1.8 dBm (T*)
• S11 = -11.8 dB (T*)
• S22 = -12.4 dB (T*)
T*ical performance @ 1.0V supply
S21 = 12.3dB
NF = 1.0dB
Ids = 3.6mA
