P沟道场效应管IRLML6401TRPBF*

品牌:IR美国国际整流器 型号:IRLML6401TRPBF 种类:*缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 用途:S/开关 封装外形:SMD(SO)/表面封装 材料:P-FET硅P沟道 开启电压:-12（V） 夹断电压:&plu*n;8.0（V） 低频跨导:N/A（μS） *间电容:830（pF） 低频噪声系数:1.0MHZ（dB） *大漏*电流:-4.3（mA） *大耗散功率:1.3（mW）

型号：IRLML6401TRPBF

品牌：International Rectifier 美国IR国际整流器

封装：SOT-23 SMD表面贴装型

批号：2010+*无铅*

*小包装：3000/reel Available in Tape and Reel （可提供样品测试，量大价优，货源稳定）

Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching

1.8V Gate Rated

Description

These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET? power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's *allest
footprint. This package, dubbed the Micro3?, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the * available.