*供应功率 MOSFET IRFL4105 原装

品牌:IR 型号:IRFL4105TRPBF 批号:09+ 封装:SOT-223 营销方式:* 产品性质:新品 处理信号:模拟信号 制作工艺:半导体集成 导电类型:双*型 集成程度:小规模 规格尺寸:6.30×3.30（mm） 工作温度:-55 to + 150（℃） 静态功耗:2.1（mW） 类型:其他IC

型号：IRFL4105TRPBF (HEXFET® Power MOSFET)

厂家：IR International Rectifier

封装：SOT-223



l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of 1.0W
is possible in a t*ical surface mount application.

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