*现货开关二*管BAS316

产品类型	开关管	品牌/商标	NXP恩智浦
型号/规格	BAS316	结构	平面型
材料	硅(Si)	封装形式	SOD-323
封装材料	塑料封装	功率特性	*率
频率特性	中频	*高反向电压VR	100（V）
正向直流电流IF	250（mA）

*开关二*管BAS316

High-speed diode BAS316
FEATUR*
•Very *all plastic SMD package
•High switching speed: max. 4 ns
•Continuous reverse voltage: max. 100 V
•Repetitive peak reverse voltage: max. 100 V
•Repetitive peak forward current: max. 500 mA.
APPLICATIONS
•High-speed switching in e.g. surface mounted circuits.
D*CRIPTION
The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package.
PINNING
PIN
D*CRIPTION
1
cathode
2
anode
Fig.1 Simplified outline (SOD323) and symbol.Marking code: A6.Cathode side indicated by a bar.handbook, halfpageMAM157ka
ORDERING INFORMATION
LIMITING VALU*
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.Ts is the temperature at the soldering point of the cathode tab.
TYPE NU*ER
PACKAGE
NAME
D*CRIPTION
VERSION
BAS316
−
plastic surface mounted package; 2 leads
SOD323
SY*OL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
100
V
VR
continuous reverse voltage
−
100
V
IF
continuous forward current
Ts = 90 °C; note 1; see Fig.2
−
250
mA
IFRM
repetitive peak forward current
−
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj = 25 °C prior to surge; see Fig.4
t = 1 μs
−
4
A
t = 1 ms
−
1
A
t = 1 s
−
0.5
A
Ptot
total power dissipation
Ts = 90 °C; note 1
−
400
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
2004 Feb 04 3
NXP Semiconductors Product data sheet
High-speed diode BAS316
CHARA*ERISTICS
Tj = 25 °C unless otherwise specified.
THERMAL CHARA*ERISTICS
Note
1.Soldering point of the cathode tab.
SY*OL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
see Fig.3
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF = 50 mA
1
V
IF = 150 mA
1.25
V
IR
reverse current
see Fig.5
VR = 25 V
30
nA
VR = 75 V
1
μA
VR = 25 V; Tj = 150 °C
30
μA
VR = 75 V; Tj = 150 °C
50
μA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA; tr = 20 ns; see Fig.8
1.75
V
SY*OL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-s)
thermal resistance from junction to soldering point
note

*现货 开关二*管BAS316

现货开关二管BAS316