*现货供应 变容二*管1SV229

应用范围:变容 品牌:TOSHIBA 型号:1SV229 结构:平面型 材料:硅(Si) 封装形式:SOD-323 封装材料:树脂封装 功率特性:*率 频率特性:中频 *高反向工作电压:15（V） 正向工作电流:0.0001（mA）

变容二*管1SV229

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar T*e
1SV229
VCO for UHF Band Radio
• Ultra low series resistance: rs = 0.2 Ω (t*.)
• Useful for *all size set
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Reverse voltage VR 15 V
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min T*. Max Unit
Reverse voltage VR IR = 1 μA 15 ? ? V
Reverse current IR VR = 15 V ? ? 3 nA
Capacitance C2 V VR = 2 V, f = 1 MHz pF
Capacitance C10 V VR = 10 V, f = 1 MHz 5.5 6 6.5 pF
Capacitance ratio C2 V/C10 V ? 2.0 2.5 ? ?
Series resistance rs VR = 5 V, f = 470 MHz ? 0.2 0.4 Ω