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IC Memory代理商大量 DRAM, FLASH,SRAM 现货, *清
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北京 北京市
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北京思强动力电子技术有限公司
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IC Memory代理商大量 DRAM, FLASH,SRAM 现货, **! Description规格 /Part No型号 /Brand品牌 /Quantity数量 Graphic DDR GDDR3 8Mx32 500Mhz FBGA144 K4J55323QF-GC2 Samsung 30720@ GDDR3 8Mx32 600Mhz FBGA144 K4J55323QF-GC16T00 Samsung 9120@ GDDR 16Mx16 250MHz TSOP HY5DU561622*-4 Hynix 11520@ GDDR 16Mx16 200MHz TSOP HY5DU561622DT-5 Hynix 11520@ GDDR 16Mx16 200Mhz TSOP 8k Ref K4D561638F-TC50T Samsung 20000@ GDDR 16Mx16 200Mhz TSOP K4D551638F-TC50 Samsung 11520@ GDDR 8MX16 250MHz TSOP K4D261638F-T*0T00 Samsung 10000@ GDDR 8Mx16 300MHz TSOP K4D261638F-TC33 Samsung 10000@ GDDR 8Mx16 200MHz TSOP K4D261638F-TC50T00 Samsung --@ GDDR 4Mx32 300MHz FPGA HY5DU283222AFP-33 Hynix 5760@ GDDR 4Mx32 300MHz FPGA HY5DU283222AF-33 Hynix 6000@ GDDR 4Mx32 350MHz FBGA 1.8V K4D26323QG-GC2A Samsung GDDR 4Mx32 FBGA K4D263238G-GC2AT00 Samsung 10000@ GDDR 16Mx16 250MHz TSOP-66 Pb Free HYB25D256163CE-4 Infineon 48000@ DDR2 DDR2 64Mx8 PC667 FBGA EDE5108A*K-6E Elpida --@ DDR2 32Mx8 PC533 (Lead Free) K4T56083QF-ZCD5 Samsung 10000@ DDR2 64Mx8 P*00 Lead Free HYB18T512800AF-5 Infineon 15000@ DDR2 32Mx16 P*00 Lead Free BGA HYB18T512160AF-5 Infineon 14000@ DDR 16Mx16 HY5DU561620DT-H hynix --@ DDR 16Mx16 HY5DU561620DT-J Hynix --@ DDR 16Mx16 HY5DU561620DT-D43 hynix --@ DDR 32Mx8 pc133 HY57V560822BT-H Hynix --@ DDR-400 DDR 64Mx8 P*00 K4H510838C-UCCC Samsung 16320@ DDR 64Mx8 P*00 Pb Free HY5DU12822*P-D43 Hynix 23040@ DDR 32Mx16 P*00 TSOP HY5DU121622*P-D43 Hynix 9000@ DDR 32Mx8 P*00 K4H560838F-TCCC Samsung 17280@ DDR 32Mx8 P*00 P2S56D30*P-5U UTT 15000@ DDR 32Mx8 P*00 HY5DU56822DT-D43 Hynix 11520@ DDR 32Mx8 P*00 PB Free HYB25D256800CE-5 Infineon 15000@ DDR 32Mx8 P*00 HY5DU56822BT-D43 Hynix 17280@ DDR-333 DDR 64Mx8-J PC333 Pb Free HY5DU12822*P-J Hynix --@ DDR 64Mx8 PC333 BGA K4H510838C-ZCB3T00 Samsung 13040@ DDR 32Mx16 PC333 K4H511638C-UCB3 Samsung 10560@ DDR 32Mx16 PC333 Pb Free HY5DU121622*P-J Hynix 11520@ DDR 32Mx8-6 PC333 MT46V32M8TG-6T Micron --@ DDR 16Mx16-J PC333 Pb Free HY5DU561622DTP-J Hynix 20000@ DDR 16Mx16 PC333 HYB25D256160CE-6 Infineon 15000@ DDR 16Mx16 PC333 EDD2516AMTA-6B Elpida 11520@ DDR 16Mx16 PC333 Lead Free K4H561638F-UCB3 Samsung 22000@ DDR-266 DDR 32Mx16-75 PC266 MT46V32M16TG-75 Micron 8000@ DDR 32Mx16 PC266 K4H511638B-UCB0 Samsung 6407@ DDR 16Mx8-B0 PC266 K4H280838F-TCB0 Samsung 11520@ DDR 4Mx32 PC266 [PB Free] EDD1232AAFA-7A-E Elpida 32400@ Mobile SDRAM Mobile SD 16Mx16 100MHz FBGA K4M5616*E-BG1L Samsung 30000@ SDRAM- PC133 SD 64Mx8-75 133MHz CL3 K4S510832B-TC75 Samsung 6000@ SD 64Mx4-75 133MHz CL3 K4S560432E-TC75 Samsung 40000@ SD 32Mx8 PC133 HY57V56820*-H Hynix 11520@ SD 32Mx8-H 133MHz CL3 HY57V56820*-H Hynix --@ SD 32Mx8-75 133MHz CL3 MT48LC32M8A2TG-75 Micron 10000@ SD 32Mx8-75 133MHz CL3 K4S560832E-TC75T Samsung 2000@ SD 32Mx8-75 133MHz CL3 K4S560832E-UC75 Samsung 20160@ SD 32Mx8-75 133MHz CL3 K4S560832E-TC75 Samsung 24960@ SD 32Mx8-75 133MHz CL3 K4S560832F-TC75 Samsung 10000@ SD 16Mx16-75E 133MHz CL3 Pb Free EDS2516APTA-75-E Elpida 20160@ SD 16Mx16-75E 133MHz CL3 Pb Free EDS2516ADTA-75-E Elpida 12000@ SD 16Mx16-H 133MHz Low Power HY57V561620CLT-H Hynix 23040@ SD 16Mx16-H 133MHz CL3 HY57V561620*-H Hynix 6720@ SD 16Mx16-75 133MHz CL3 MT48LC16M16A2TG-75 Micron 16000@ SD 16Mx16-75 133 MHz K4S561632E-TC75 Samsung 10000@ SD 16Mx16-75 133 MHz PB Free K4S561632E-UC75 Samsung 7680@ SD 16Mx8-75 133MHz CL3 UPDG5-A75-9JF Elpida 3240@ SD 16Mx8-H 133MHz CL3 HY57V28820ET-H Hynix 1607@ SD 16Mx8 PC133 CL3 K4S280832F-TC75 Samsung 11520@ SD 16Mx8-75 133Mhz CL3 K4S280832F-TC75T Samsung 14000@ SD 8Mx16-H 133MHz CL3 HY57V281620H*-H Hynix --@ SD 8Mx16-H 133MHz CL3 HY57V281620ET-H Hynix 11520@ SD 8Mx16-H 133MHz CL3 HY57V281620ETP-H Hynix 10000@ SD 8Mx16-6 166MHz HY57V281620ET-6 Hynix --@ SD 8Mx16-6 166MHz HY57V281620ET-6DR Hynix 10000@ SD 8Mx16-H 133MHz CL3 [Pb free] HY57V281620H*P-H Hynix --@ SD 8Mx16-H PC133 CL3 HY57V281620H*-H Hynix 10000@ SD 8Mx16-7 143MHz CL2 HYB39S128160*-7 Infineon 10500@ SD 8Mx16-75 133MHz CL3 MT48LC8M16A2TG-75 Micron 4800@ SD 8Mx16-7E 143MHz CL2 MT48LC8M16A2TG-7E Micron 15000@ SD 8Mx16-75 133MHz CL3 K4S281632F-TC75 Samsung 20000@ SD 8Mx16-75 133MHz CL3 K4S281632F-TC75T00 Samsung --@ SD 8Mx16-75 133MHz CL3 K4S281632F-TC75T Samsung 30000@ SD 8Mx16-75 133MHz CL3 Pb Free K4S281632F-UC75 Samsung 30000@ SD 4Mx32-6 166MHz CL3 MT48L*M32B2TG-6 Micron 5000@ SD 4Mx16 133MHz HY57V641620HGT-HDR Hynix --@ SD 4Mx16-H 133MHz HY57V641620ET-H Hynix 45000@ SD 4Mx16 PC143 HY57V641620HGT-7DR Hynix 50000@ SD 4Mx16 PC143 HY57V641620ET-7 Hynix 23040@ SD 4Mx16-H PC133 CL3 HY57V641620HGT-H Hynix 11520@ SD 4Mx16 PC133 CL3 HY57V641620HGT-H Hynix 10000@ SD 4Mx16 PC133 CL3 HY57V641620ET-H Hynix 10000@ SD 4Mx16-75 133Mhz K4S641632H-TC75 Samsung 11520@ SD 4Mx16-60 133Mhz Pb Free K4S641632H-UC60 Samsung 10000@ SD 4Mx16-75 133Mhz Pb Free K4S641632H-UC75 Samsung 38400@ SD 4Mx16-6 166Mhz K4S641632H-TC60 Samsung 11520@ SD 4Mx16-75 133Mhz K4S641632H-TC75T Samsung --@ SD 2Mx32 PC143 HY57V643220DT-7 Hynix 11520@ SD 2Mx32 PC166 HY57V643220DT-6 Hynix --@ SD 2Mx32 PC143 HY57V643220*-7 Hynix 11520@ SD 2Mx32-7 PC143 MT48LC2M32B2TG-7 Micron 25000@ SD 2Mx32-6 PC166 MT48LC2M32B2TG-6 Micron 12000@ SD 2Mx32-6 166MHz Pb Free MT48LC2M32B2P-6 Micron 20000@ SD 2Mx32-7 143MHz K4S643232F-TC70 Samsung 10000@ SD 2Mx32-6 166MHz K4S643232H-TC60T00 Samsung 48000@ SD 2Mx32-6 166MHz K4S643232H-TC60T Samsung 48000@ SD 1Mx16-7 143MHz EM636165TS-7 Etron 10000@ SD 1Mx16-7 143MHz Pb Free EM636165TS-7G Etron 10000@ SD 1Mx16-7 PC143 M12L16161A-7T Elite-MT 10000@ SD 1Mx16 PC143 HY57V161610ET-7 Hynix --@ SD 1Mx16-7 PC143 HY57V161610ET-7DR Hynix 11520@ SD 1Mx16-7 PC143 lead free HY57V161610ETP-7 Hynix 11520@ SD 1Mx16-5 Pb Free I*2S16100-5TG ICSI 20000@ SD 1Mx16-6 PC166 V54C316162V*-6 Mosel Viic 10000@ SD 1Mx16-6 PC166 CL3 Pb Free K4S161622H-UC60 Samsung 40000@ SD 1Mx16-6 PC166 CL3 K4S161622H-TC60 Samsung 10000@ SD 2Mx32 PC143 Pb Free HY57V643220DTP-6 Hynix 11520@ SD 4Mx16 PC143 HY57V641620ET-7DR Hynix --@ SDRAM- PC100 SD 1Mx16-8 PC125 K4S161622D-TC80T00 Samsung 6000@ y EDO Extended Data Out EDO 1Mx16-60 5V 1K TSOP AS4C1M16E5-60TC Alliance 10000@ EDO 1Mx16-60 3.3 TSOP GM71VS18163CLT-6 Hynix 950@ EDO 128Kx16 5V HY512264TC-60 Hynix 10000@ EDO 4Mx4 3.3V TSOP M11L1644SA-50T *MT 10000@ SRAM HY62U8100BLLST-70I Hynix 23,040 stock HY62U8100BLLST-85I Hynix 23,040 stock HY62UF16201ALLF-55I Hynix 23,040 stock DDR MODULE DDR2 S.O. DIMM 512* PC533 Hynix Orig. 1,000 stock HYMP564S64P6-*PC533 DDR2 S.O. DIMM 256* PC533 Hynix Orig. 1,000 stock HYMP532S64P6-*PC533 DDR2 DIMM 512* PC533 Hynix Orig. 1,000 stock HYMP564U64P8-*PC533 DDR2 DIMM 256* PC533 Hynix Orig. 1,000 stock HYMP532U64P6-*PC533 FPM Fast Page Mode FPM 1Mx16-60 3.3V 1K TSOP GM71V18160*-60 Hynix 10000@ ISSI ISSI IS61LV12816-15LQI ISSI --@ 深圳富达电子公司 *: 中国 地区: 广东省深圳市福田区 邮政编码: 518021 :刘先生 : :hot8888@gmail.com
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