品牌:Diodes 型号:DDTA114YUA-7-F 应用范围:带阻尼 功率特性:*率 频率特性:中频 *性:PNP型 结构:面接触型 材料:硅(Si) 封装形式:贴片型 封装材料:塑料封装 集电*允许电流:-100（A） 集电**大允许耗散功率:200（W） 营销方式:现货 产品性质:*
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain to
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTA114YUA;DI_DDTA114YUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
.MODEL DI_DDTA114YUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
