发射管研发设计生产850*鼎元发射二*管
地区：广东 深圳
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Absolute Maximum Ratings (Ta=25℃)
Parameter | Symbol | Rating | Unit |
Continuous Forward Current | IF | 30 | mA |
Peak Forward Current | IFP | 1 | A |
Reverse Voltage | VR | 5 | V |
Operating Temperature | Topr | -40 ~ 85 | ℃ |
Storage Temperature | Tstg | -40 ~ 85 | ℃ |
Soldering Temperature | Tsol | 260 | ℃ |
Power Dissipation at25℃Free Air Temperature | Pd | 60 | mW |
Notes:*1:IFPConditions--Pulse Width≦100μs and Duty≦1%.
*2:Soldering time≦5 seconds.
Electro-Optical Characteristics (Ta=25℃)
Parameter | Symbol | Condition | Min | T* | Max | Unit |
Radiant Intensity | IE | IF=20mA | 6.8 | 12 | -- | mW/sr |
Radiant Intensity | IE | IF=100mA Pulse Width≦100μs ,Duty≦1% | -- | 120 | -- | mW/sr |
Radiant Intensity | IE | IF=1A Pulse Width≦100μs ,Duty≦1% | -- | 900 | -- | mW/sr |
Peak Wavelength | λp | IF=20mA | -- | 850 | -- | nm |
Spectrial Bandwidth | Δλ | IF=20mA | -- | 45 | -- | nm |
Forward | VF | IF=20mA | -- | 1.45 | 1.65 | V |
Forward | VF | IF=100mA Pulse Width≦100μs ,Duty≦1% | -- | 1.6 | 2.0 | V |
Forward Voltage | VF | IF=1A Pulse Width≦100μs ,Duty≦1% | -- | 4.1 | 5.25 | V |
Reverse Current | IR | VR=5V | -- | -- | 10 | μA |
View Angle | 2θ1/2 | IF=20mA | -- | 45 | -- | deg |
金线和晶片
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是
角度可选择
TKIRP5112T10
功率二*管
台湾鼎元芯片
监控夜视效果辅助作用
波段850NM
1.45-1.55V
