供应3英寸IC抛光硅片

Our factory can maufacture the IC grade 3 inch prime silicon wafer

Growth Method    CZ
Conductivity T*e   P/N   
Dopant        P,B,AS
Resistivity:    0.001 - 1ohm-cm , 1 - 1000 ohm-cm
thickness: customization
Crystal orientation:  <110> <111>
surface: no scratch, no saw mark, no chip, no stain
single/double polished
packing Aluminum foil vacuum packing        
particle <10 & 0.3um
TTV < 4um
TIR < 4um
bow < 40um
warp < 40um
EPD < 100

william

Jun He electronic material Co.,Ltd

sk*e willia*99999willia*99999

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mobile 86-

website www.waferhome.com

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