供应复合NPN管BC846S INFINEON

NPN Silicon AF Transistor Array

For AF input stages and driver applications

High current gain

Low collector-emitter saturation voltage

Two ( galvanic) internal isolated Transistors
   with good matching in one package

Maximum Ratings
Parameter Symbol Value Unit
VCEO 65 Collector-emitter voltage V
Collector-base voltage 80 VCBO
Collector-emitter voltage VC* 80
Emitter-base voltage 6 VEBO
DC collector current IC 100 mA
Peak collector current 200 ICM
250 Total power dissipation, TS = 115 °C Ptot
mW
Junction temperature Tj
150 °C
Storage temperature Tstg -65 ... 150