供应 场效应管 AP9972GI 9972GI

AP9972GI,TO-220F,DIP/MOS,N场,60V ,35A,0.018Ω
CMF30N06L,TO-220F,DIP/MOS,60V ,30A,0.035Ω
TK75A06K3,TO-220F,DIP/MOS,N场,60V ,75A,0.0055Ω
2SD2396,TO-220F,DIP/MOS,NPN,60V,3A,
TK30A06J3A,TO-220F,DIP/MOS,N场,60V ,30A,0.026Ω
TK75A06K3,TO-220F,DIP/MOS,N场,60V ,75A,0.0055Ω
AP9972GI,TO-220F,DIP/MOS,N场,60V ,35A,0.018Ω
TK75A06K3,TO-220F,DIP/MOS,N场,60V ,75A,0.0055Ω

产品型号:AP9972GI

FEATURES:
 * 栅极电荷
 * 单身驱动要求
 * 低导通电阻

封装:TO-220F

品牌：AP/富鼎

源漏极间雪崩电压V(br)dss(V):60

夹断电压VGS(V):±25

最大漏极电流Id(A):35

源漏极最大导通电阻rDS(on)(Ω):0.018 @VGS = 10 V

开启电压VGS(TH)(V):3

功率PD(W):31.3

输入电容Ciss(PF):3160 typ.

通道极性:N沟道

低频跨导gFS(s)：40

单脉冲雪崩能量EAS(mJ):

导通延迟时间Td(on)(ns):12 typ.

上升时间Tr(ns):37 typ.

关断延迟时间Td(off)(ns):47 typ.

下降时间Tf(ns):59 typ.

温度(℃): -55 ~150

描述:AP9972GI,60V ,35A N-沟道增强型场效应晶体管

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