IC集成电路MPSA13ZL1G

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MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VC* 30 Vdc
Collector−Base Voltage VCBO 30 Vdc
Emitter−Base Voltage VEBO 10 Vdc
Collector Current − Continuous IC 500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD 625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to 150 °C
THERMAL CHARA*ERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R JA 200 °C/mW
Thermal Resistance, Junction−to−Case R JC 83.3 °C/mW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the