IRF830 场效应管

品牌:IR美国国际整流器公司 型号:IRF830 种类:结型(JFET) 沟道类型:N沟道 导电方式:增强型 封装外形:CER-DIP/陶瓷直插 材料:N-FET硅N沟道 开启电压:标准（V） 夹断电压:标准（V） 低频跨导:标准（μS） *间电容:标准（pF） 低频噪声系数:标准（dB） *大漏*电流:标准（mA） *大耗散功率:标准（mW）

N-CHANNEL 100V - 0.115 W - 14A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET

n TYPICAL RDS(on) = 0.115W
n *ALANCHE RUGGED TECH*LOGY
n 100% *ALANCHE T*TED
n LOW GATE CHARGE
n HIGH CURRENT CAPABILITY
n 175 oC OPERATING TEMPERATURE
D*CRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET™ process has specifically been
designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer applications. It is
also intended for any applications with low gate drive
requirements.
APPLICATIONS
n HIGH CURRENT, HIGH SWITCHING SPEED
n SOLE*ID AND RELAY DRIVERS
n REGULATOR
n DC-DC & DC-AC CONVERTERS
n MOTOR CONTROL, AUDIO AMPLIFIERS
n AUTOMOTIVE ENVIRONMENT (INJE*ION,
ABS, AIR-BAG, LAMPDRIVERS, etc.)