s8050;8050火暴销售中集成电路IC

JIANGSU CHANGJIANG ELE*RONICS TECH*LOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8050S TRANSISTOR（ NPN ）
FEATUR*
Power dissipation
PCM : 0.625 W（Tamb=25℃）
Collector current
ICM : 0.5 A
Collector-base voltage
V(BR)CBO :40 V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
ELE*RICAL CHARA*ERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μA , IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA， IC=0 5 V
Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 μA
Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 μA
Emitter cut-off current IEBO VEB= 3 V， IC=0 0.1 μA
hFE（1） VCE= 1 V, IC= 50mA 85 300
DC current gain
hFE（2） VCE= 1 V, IC= 500mA 50
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50 mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50 mA 1.2 V
Transition frequency fT
VCE= 6 V, IC=20mA
f =30MHz
150 MHz
CLASSIFICATION OF hFE(1)
Rank B C D
Range -300
1 2 3
TO—92
1.EMITTER
2. COLLE*OR
3.BASE