主要应用领域：小功率充电器，PC电源辅助电源
Silicon N-Channel Power MOSFET
CS4N60A4HD
General Description：
VDSS
600
V
ID
4
A
PD(TC=25℃)
55
W
RDS(ON)
1.9
Ω
CS4N60A4HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
Features：
竛 Fast Switching
竛 ESD Improved Capability
竛 Low Gate Charge (Typical Data: 18nC)
竛 Low Reverse transfer capacitances(Typical: 14pF)
竛 100% Single Pulse avalanche energy Test
