供应场效应管CS13N50A8H

应用领域：电子镇流器，车载逆变器，非隔离式的LED驱动，汽车安定器

Silicon N-Channel Power MOSFET
CS13N50A8H
General Description：
CS13N50A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.
Features：
 Fast Switching
 Low ON Resistance(Rdson≤0.45Ω)
 Low Gate Charge (Typical Data:85nC)
 Low Reverse transfer capacitances(Typical:100pF)
 100% Single Pulse avalanche energy Test