*供应成型三*管BD435

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BD433
: BD435
: BD437
22
32
45
VVV
VC* Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
VVV
VCEO Collector-Emitter Voltage
: BD433
: BD435
: BD437
22
32
45
VVV
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 4 A
ICP *Collector Current (Pulse) 7 A
IB Base Current 1 A
PC Collector Dissipation (TC=25°C) 36 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Medium Power Linear and Switching
Applications
• Complement to BD434, BD436 and BD438 respectively