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| SY*OL | SM5817 | SM5818 | SM5819 | UNITS | ||
*大峰值反向电压 MaximumCurrent PeakReverse Voltage | VRRM | 20 | 30 | 40 | Volts | ||
*大反向*电压 Maximum RMS Voltage | VRMS | 14 | 24 | 28 | Volts | ||
*大直流阻断电压 Maximum DC Blocking Voltage | VDC | 20 | 30 | 40 | Volts | ||
*大正向平均整流电流TT=90℃ Maximum Average Forward Rectified current
| I(*) | 1.0 | Amps | ||||
正向峰值浪涌电流 Peak Forward Surge current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC Method) | IFSM | 25.0 | Amps | ||||
1.0A直流电时*大正向*电压降 Maximum Instantaneous Forward Voltageat1.0DC | VF | 0.45 | 0.55 | 0.6 | Volts | ||
*大反向漏电流 Maximum DC Reverse Current @ TA=25℃ at Rated DC Blocking Voltage @ TA=125℃ | IR | 0.5 10.0 | mA | ||||
典型结电容 T*ical Junction Capacitance (Note 1) | CJ | 110.0 | 80.0 | Pf | |||
典型热阻 T*ical Thermal Resistance (Note 2) | RθJA | 15.0 | ℃/W | ||||
工作温度与存储温度 Operating and Storage Temperature Range | TSTG/TJ | -55 to 125/-65 to 150 | ℃ |
大量供应肖特基二*管, SM5818 DO-213AB封装。
PN/SM5818
是
肖特基管
否
平均直流电流IF=1.0A 反向击穿电压大于30V 压降小于0.55V
用作高频、低压、大电流整流二*管(比如开关电源次*整流二*管),续流二*管、保护二*管,也有用在微波通信等电路中作整流二*管、小信号检波二*管使用
硅Si