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特点 Features
■ 芯片与底板电气*缘,2500V交流电压 ■ The chip and base-board are electric-insulation, 2500V AC voltage
■ 芯片与底板电气*缘,2500V交流电压 ■ Packing with international standard
■ 全压接结构,优良的温度特 性和功率循环能力 ■ Completely press-connection structure, with * temperature properties and power-cycling capability
■ 200A以下模块皆为强迫风冷,300A以上模块,既可选用风冷,也可选用水冷 ■ The module below 200A are all forced wind-cooling, the module above 300A could select wind cooling or water-cooling for use.
■ 安装简单,使用维修方便 ■ The installation,use as well as maintenance are simple
■体积小,重量轻 ■ Small volume and light weight
典型应用 T*ical-application
■ 逆变器 ■ Contravariant device
■ 感应加热 ■ Induction heating
■ 斩波器 ■ Chopper
说明 Instruction ■ VDSM/VRSM=VDRM/VRRM+200V ■ VDSM/VRSM=VDRM/VRRM+200V
■ 除非另作说明,IGT、VGT、IH、VTM、VFM、Viso均为25℃下的测试值。表中其它参数皆为Tjm下的测试值。 ■ Only if proved separately, theIGT、VGT、IH、VTM、VFM、Viso are the tested value below 25℃, other parameters inside form all are the tested value below Tjm
■ I2t=I2TSMtw/2;式中tw:正弦半波电流底宽 在50Hz频率下,I2t(10ms)=0.005I2TSM(A2S)
■ I2t=I2TSMtw/2;式中tw:正弦半波电流底宽 the tw inside equation is sine semi-wave current base-width, in the case of 50Hz,
■ 当使用在频率为60Hz情况下, ■ If used in the case of frequency below 60Hz, ITSM(8.3ms)=1.066ITSM(10ms),I2t(8.3ms)=0.943I2t(10ms) ITSM(8.3ms)=1.066ITSM(10ms),I2t(8.3ms)=0.943I2t(10ms)