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FQB55N10 - MOSFET, N, D2

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品牌/商标	*童	型号/规格	FQB55N10 - MOSFET, N, D2-PAK
批号	08+	封装	MOSFET, N, D2-PAK
营销方式	库存	产品性质	*
类型	通信IC

Description

MOSFET, N, D2-PAK
Transistor Polarity:N
Max Current Id:55A
Max Voltage Vds:100V
On State Resistance:0.026ohm
Rds Measurement Voltage:10V
Max Voltage Vgs:25V
Power Dissipation:155W
Operating Temperature Range:-55ºC to +175ºC
Transistor Case Style:D2-PAK
SVHC:Cobalt dichloride (18-Jun-2010)
Alternate Case Style:D2-PAK
Case Style:D2-PAK
Cont Current Id:55A
Max Voltage Vgs th:4V
Power Dissipation Pd:155W
Power Dissipation on 1 Sq. PCB:3.75W
Pulse Current Idm:220A
SMD Marking:FQB55N10
Termination T*e:SMD
Transistor T*e:MOSFET
T* Voltage Vds:100V
T* Voltage Vgs th:4V
Voltage Vds:100V
Voltage Vgs Rds on Measurement:10V
SVHC (Secondary):Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)