*芯片*2SC2078三*管

Collector-to-Base Voltage  VCBO   80  V  
Collector-to-Emitter Voltage  VCER  RBE=150W  75  V  
Emitter-to-Base Voltage  VEBO   5  V  
Collector Current  IC   3  A  
Collector Current (Pulse)  ICP   5  A  
Collector Dissipation  PC   1.2  W  
Tc=50°C  10  W  
Junction Temperature  Tj   150  °C  
Storage Temperature  Tstg   –55 to 150  °C  
at Ta = 25°C  
Parameter  Symbol  Conditions  Ratings  Unit  
min  t*  max  
Collector Cutoff Current  ICBO  VCB=40V, IE=0    10  μA  
Emitter Cutoff Current  IEBO  VEB=4V, IC=0    10  μA  
DC Current Gain  hFE  VCE=5V, IC=0.5A  25*   200*   
Gain-Bandwidth Product  fT  VCE=10V, IC=0.1A  100  150   MHz  
Output Capacitance  Cob  VCB=10V, f=1MHz   45  60  pF  
Collector-to-Emitter Saturation Voltage  VCE(sat)  IC=1A, IB=0.1A   0.15  0.6  V  
Base-to-Emitter Saturation Voltage  VBE(sat)  IC=1A, IB=0.1A   0.9  1.2  V