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供应场效应MOSFET管 FDD5614P

地区：广东 深圳
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深圳市福田区新亚洲电子市场二期嘉能源电子经营部

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品牌:FAIRCHILD 型号:FDD5614P FDD5612 种类:结型(JFET) 沟道类型:N沟道 导电方式:耗尽型 用途:L/功率放大 封装外形:SMD(SO)/表面封装 材料:P-FET硅P沟道 开启电压:20（V） 夹断电压:-60V（V） *间电容:759（pF） *大漏*电流:-15A（mA） *大耗散功率:42（mW）

本公司*经营世界名厂(IR ST FAIRCHILD VISHAY ZETEX infineon)：二三*管 场效应管 精密稳压IC；欢迎来电咨询： 只做现货

FDD120AN15AOFAIRCHILD09+TO-252
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