供应可控硅BT136-600E

LIMITING VALU*
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SY*OL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
VDRM Repetitive peak off-state V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C - 4 A
ITSM Non-repetitive peak full sine wave; Tj = 25 °C prior to
on-state current surge
t = 20 ms - 25 A
t = 16.7 ms - 27 A
I2t I2t for fusing t = 10 ms - 3.1 A2s
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/μs
triggering T2 G - 50 A/μs
T2 G- - 50 A/μs
T2- G- - 50 A/μs
T2- G - 10 A/μs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(*) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 °C
Tj Operating junction - 125 °C