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BAS70 series
Schottky barrier (double) diodes
峰值反向电压: | 70 V |
正向连续电流: | 0.07 A |
*大浪涌电流: | 100 A |
配置: | Dual Series |
恢复时间: | 5 ns |
正向电压下降: | 1 V @ 0.15 A |
*大反向漏泄电流: | 0.1 uA |
工作温度范围: | - 65 C to 150 C |
安装风格: | SMD/SMT |
封装 / 箱体: | SOT-23 |
封装: | Reel |
FEATUR*
• Low forward current
• High breakdown voltage
• Guard ring protected
• Small plastic SMD package
• Low diode capacitance.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits.
D*CRIPTION
Planar Schottky barrier diodes with an
integrated guard ring for stress
protection. Single diodes and double
diodes with different pinning are
available.
The diodes BAS70, BAS70-04,
BAS70-05 and BAS70-06 are
encapsulated in a SOT23 *all
plastic SMD package. The BAS70-07
is encapsulated in a SOT143B *all
plastic SMD package
LIMITING VALU*
In accordance with the Absolute Maximum Rating System (IEC 134).
SY*OL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VR continuous reverse voltage − 70 V
IF continuous forward current − 70 mA
IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 − 70 mA
IFSM non-repetitive peak forward current tp < 10 ms − 100 mA
Tstg storage temperature −65 150 °C
Tj
junction temperature − 150 °C
Tamb operating ambient temperature −65 150 °C
-65 to 150(℃)
06+
硅(Si)
是
3
-70v
BAS70-04
肖特基管
PHILIPS/飞利浦
SOT-23