原装*场效应管2SK3679-01MR

*原装*FUJI品牌.

2SK3679-01MR    TO-22F  

900V/1.58?/9A

the express written consent of Fuji Electric Co.,Ltd.
Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY
1) Package  TO-220F
2) Absolute Maximum Ratings (Tc=25℃　unless otherwise specified)
Items Units
Drain-Source Voltage V
Continuous Drain CurrentA
Pulsed Drain Current A
Gate-Source Voltage V
A
mJ
*1
Maximum Drain-Source dV/dtdVDS/dtkV/us
Peak Diode recovery dV/dtdV/dtkV/us *2
W
W
Operating and Storage ℃
Temperature range ℃
3)Electrical Characteristics (Tch=25℃ unless otherwise specified)
ItemsSymbolsTest Condition*in.t*.max.Units
Drain-Source Breakdown Voltage BVDSS ID=250u*GS=0V 900------V
Gate Threshold Voltage VGS(th)ID=250u*DS=VGS 3.0---5.0V
VDS=900VTch=25℃ ------25 μA
VGS=0VTch=125℃ ------250 μA
Gate-Source Leakage Current IGSS VGS=&plu*n;30VVDS=0V ------100nA
Input Capacitance Ciss VDS=25V ---1200---
Output Capacitance Coss VGS=0V ---140---pF
Reverse Transfer Capacitance Crss f=1MHz---7---
Total Gate ChargeQg Vcc=450V---32---
Gate to Source ChargeQgs ID=9A ---7---nC
Gate to Drain (Miller) ChargeQgd VGS=10V ---7---
Avalanche Capability I* L=6.51mHTch=25℃ 12------A
Diode Forward On-Voltage VSD IF=9A,VGS=0V,Tch=25℃ ---1.01.5V
4) Thermal Characteristics
ItemsSymbolsTest Condition*in.t*.max.Units
Channel to CaseRth(ch-c) 1.316 ℃/W
Channel to AmbientRth(ch-a)58.0 ℃/W
Zero Gate Voltage Drain Current
Drain-Source On-State ResistanceVGS=10V---
IDSS
RDS(on)ID=4.5A Ω ---1.58
287.7
20
5
95
2.16
150
-55 ～ 150
Ratings
900
&plu*n;9
&plu*n;36
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Tch
Tstg
Maximum Power Dissipation
PD @Ta=25℃
PD　＠Ｔc=25℃
2SK3679-01MR  (900V/1.58?/9A)
VGS
IAR
EAS
Symbols
VDS
ID
ID(pulse)
&plu*n;30
9