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*原装IGBT 28A 300V 39W N沟
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSE
TM)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
IR/国际整流器
IRGI4065PBF
*缘栅(MOSFET)
N沟道
增强型
DIFF/差分放大
CER-DIP/陶瓷直插
IGBT*缘栅比*
1.25(V)
300(V)
1(μS)
1(pF)
1(dB)
28000(mA)
39000(mW)
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