供应电源场效应管HAT1036R

Silicon P Channel Power MOS FET
High Speed Power Switching

Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting

Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS –30 V
Gate to source voltage VGSS &plu*n;20 V
Drain current ID –7 A
Drain peak current ID (pulse)
Note 1 –56 A
Body-drain diode reverse drain current IDR –7 A
Channel dissipation Pch Note 2 2.5 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the gl* epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s