MPR金属化薄膜电容

品牌:CSD创硕达 型号:MPR金属化薄膜电容 介质材料:*薄膜 应用范围:耦合 外形:长方形 功率特性:*率 频率特性:高频 调节方式:固定 引线类型:径向引出线 允许偏差:&plu*n;5（%） 耐压值:2000（V） 标称容量:0.001～3.3UF 损耗:MAX0.1% 额定电压:100VDC/63VAC.250VDC/160VAC-400VDC.200VAC-630VDC/220VAC（V）

Metallized Pol*ropylene film Capacitor (MPR)
MPR are constructed with metallized pol*ropylene film dielectric, copper clad steel leads and epoxy resin coating.They are suitable for blocking ,by-p* ,coupling,deeoupling filtering,timing ,tuning temperature compensation,and ideal for use in telecommunication equipments,data processing equipments,
industrial instruments,automatic control system and other general electronic equipments.

FEATUR*:
1 Low dissipation factor
2.High stability of capacitance and DF relative temperature and frequent Non-inductive construciton and self-healing property.

Insulation resistance:
Test conditions
Temperature: +25oC&plu*n;5
Voltage charge time: 1 min
Voltage charge: 100Vdc
Performance
>20000mΩ(C≤F)
>2000mΩ*μ F(C>0.1μ F)
WITHSTAND VOLTAGE: 1.6Vr(2SEC)

T*T METHOD AND PERFORMANCE
Test conditions
Temperature: +25&plu*n;5oC
Voltage charge time: lmin
Voltage charge: 100VDC 10VDC

performance
>20000mΩ(C≤0.1μF)
>2000mΩ*μF(C>0.1μF)

WITHSTAND VOLTAGE: 1.6Vr(2SEC)
T*T METHOD AND PERFORMANCE
Test conditions
temperature: +40oC &plu*n;2oC
Relative humidity(RH):93% &plu*n;2%
Test duration: 21 days

Performance
Capacitance change(~C/C): ≤&plu*n;5%
DFchange(/~DF): ≤5% at 1KHz
insulation resistance: ≥50% of initial limit

Endurance:
Test conditions
temperature: ＋85oC&plu*n;2oC
Test duration: 1000h
Voltage aplied:1.25xVr
Capacitance change(/~C/C): ≤&plu*n;5%
DFchange(~DF): ≤5% at 10KHz for C≤uF
Insulation resistance: ≥50% of initial limit

Resistance to soldering heat:
Test conditions
Solder bath temperature:+260&plu*n;5oC
Dipping time(with heat screen):5s&plu*n;1 s

Performance
Capacitance change(/~ C/C):≤&plu*n;2%
DFchange(ADF): ≤50dx10(-4) at 1KHz
Insulation resistance: ≥50% of initial limit